서지주요정보
마스크 없는 Pendeo epitaxy 공정에 의한 저결함 GaN 박막의 미세구조 연구 = Microstructural characterization of the low dislocation density GaN films grown by maskless pendeo epitaxy
서명 / 저자 마스크 없는 Pendeo epitaxy 공정에 의한 저결함 GaN 박막의 미세구조 연구 = Microstructural characterization of the low dislocation density GaN films grown by maskless pendeo epitaxy / 박동준.
저자명 박동준 ; Park, Dong-Jun
발행사항 [대전 : 한국과학기술원, 2004].
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등록번호

8015071

소장위치/청구기호

학술문화관(문화관) 보존서고

MAME 04011

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리뷰정보

초록정보

The group III nitrides of AlN, GaN and InN possess direct bandgaps of ≒ 1.8eV ≒ 3.4eV$ and ≒ 6.2eV$, respectively. These compounds and their alloys have become key materials in the development and the commercial realization of short-wavelength photonic devices for display and data-storage applications, solar-blind UV detectors, as well as sources of white light. Essentially, all III-nitride films are heteroepitaxially grown on sapphire (α-Al2O3(0001)) or silicon carbide (SiC(0001)). These substrates have lattice parameters and coefficient of thermal expansion that are, respectively, +16% and +39% (sapphire) and -3.5% and -3.2%(SiC), Relative to GaN. The resulting residual stresses are accommodated by the formation of misfit and threading dislocations in the nitride layers. The latter dislocations occur throughout thin GaN films in densities of ≒109cm-2. These dislocations propagate up to the surface, deteriorating the performance of optical and electronic devices. Therefore, a primary goal in recent III-nitride research has been the reduction in the density of these defects. In this paper, Maskless Pendeo Epitaxy that employs lateral growth from etched seed forms to achieve a marked reduction in dislocation in dislocation density in a material was investigated. For analysis, Pendeo Epitaxy GaN was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) for structural and optical properties of GaN layer. The crystallographic tilt and surface morphology in maskless Pendeo Epitaxy process is strongly related to the ratio of lateral to vertical growth rate (γ). Because γ is related to growth parameters such as growth temperature, reactor pressure and V/III ratio, Pendeo Epitaxy GaN with different growth parameters was systematically investigated. The tilt at wing region is increased with relatively low γ but decreased with high γ. However extremely high γ rather tends to cause the degradation of surface morphology. Two-step growth process has been used for lower dislocation density in Pendeo Epitaxy GaN; the first-step has inclined facets, and then in the second step Pendeo Epitaxy GaN is easily buried by changing the growth conditions. In two step growth, the dislocation density is dramatically dropped.

서지기타정보

서지기타정보
청구기호 {MAME 04011
형태사항 iv, 100 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Dong-Jun Park
지도교수의 한글표기 : 이정용
지도교수의 영문표기 : Jeong-Yong Lee
학과명칭변경 : 재료공학과가 신소재공학과로 변경
학위논문 학위논문(석사) - 한국과학기술원 : 신소재공학과,
서지주기 참고문헌 : p. 98-100
주제 GaN
박막
GAN
EPITAXY
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