The DC magnetron sputtering source to deposit a metal thin film has been improved for many years. The representative advanced magnetron is an IPVD using an ICP coil. Recently the new type magnetron sputtering source which has two grids between target and substrate is developed. the deposited film using new type magnetron is much more smooth than that without grids. So in this study, the plasma characteristics of the new type magnetron is examined. and also the plasma characteristics of conventional DC magnetron sputtering and the magnetron using 1 grid is studied. In result, It is revealed that the grid inserted between the target and the substrate makes plasma potential difference. The potential difference characterized the plasma characteristics of the region between the target and the grid and that between the substrate and the grid. Because of the plasma density variation caused by plasma potential difference, it seems that the Penning ionization process of target material between the substrate and the grid in new type magnetron is enhanced and it is thought that target ion density/Ar ion density is increased and the ion ratio makes the film smooth.