서지주요정보
RF magnetron sputtering 으로 증착한 epitaxial $BaTiO_3$ 박막의 초고주파 유전 특성 = Microwave dielectric characteristics of epitaxial $BaTiO_3$ thin films by RF magnetron sputtering
서명 / 저자 RF magnetron sputtering 으로 증착한 epitaxial $BaTiO_3$ 박막의 초고주파 유전 특성 = Microwave dielectric characteristics of epitaxial $BaTiO_3$ thin films by RF magnetron sputtering / 현태선.
저자명 현태선 ; Hyun, Tae-Seon
발행사항 [대전 : 한국과학기술원, 2003].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8014598

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 03047

SMS전송

도서상태

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반납예정일

초록정보

The prospects of using ferroelectrics thin films for the farbrication and development of frequency and phase agile microwave devices have increased in past few years due to improvenebts in ferroelectric thin film processing techniaues as well as innovative circuit design. In microwave devices, ferroelectric thin film is used as tuning layer through the electric field dependence of the relative dielectric constant. Typical paraelectric materials ($SrTiO_3, KTaO_3, Ba Sr_1 TiO_3$) and electrically tunable microwave devices based on these materials shows that in spite of the recent year`s extensive efforts, no considerable improvement in the microwave losses in thin paraelectric films has been achieved. Thin films, regardless of fabrication method and substrate type, have much lower dielectric permittivity than bulk single crystals, and the loss tangent at microwave frequencies (10 GHz) is of the order of 0.01 (at zero dc-bias field) at room temperature. Nevertheless, quite promising component and subsystem level devices are successfully demonstrated. Use of ceramic (bulk and thick film) ferroelectrics in tunable microwave devices, currently considered for industrial applications, offer cost reduction. In this paper, explicitly for the first time, we consider possibilities and benefits of using ferroelectrics in polar phase in electrically controllable microwave devices. Examples of using ferroelectrics in polar state (e.g., Na0 5K0 5NbO3, SrTiO3 in antiferroelectric phase) in electrically tunable devices are reported. Index Terms-Ferroelectrics, paraelectrics, tunable microwave devices. This trends demand the researches about ferroelectric material with polar phase in microwave frequency. In this study, typical ferroelectric material, $BaTiO_3$ thin films with polar phase were observed dielectric properties in microwave frequency. In this study, typical ferroelectric material, $BaTiO_3$ this films with polar phase were observed dielectirc properties in microwave frequency. $BaTiO_3$ thin films were epitaxially grown on $LaAlO_3$ substrates by RF magnetron sputtering system of a stoichiometric, high- density, ceramic target. X-ray diffraction analysis showed c-axis oriented cube-on cube growth. Micrometer size interdigital capacitor (IDT) structures were defined on surface the BT film using photolithography. The electrical characterization at 10GHz showed dissipation factor tan δ of 0.18, tunability 1.5% applied bias voltage 15V. The capacitance and tan δ were showed to remain stably from 500 MHz to 10 GHz. The results showed abilities improved to apply for tunable microwave devices based on ferroelectric BT thin film

서지기타정보

서지기타정보
청구기호 {MMS 03047
형태사항 3, 52 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Tae-Seon Hyun
지도교수의 한글표기 : 최시경
지도교수의 영문표기 : Si-Kyung Choi
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 49-52
주제 바륨타이타네이트 박막
초고주파 유전 특성
스퍼터링
BaTiO3 thin film
microwave dielectric characteristics
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