In a semiconductor equipment, high accumulation process and large area process have become important for their high efficiency and large capacity. Sputter gun development of more than 12“ was needed in order to deposit uniformly on more than 8” Si wafer. As a diameter of the sputter gun increased, uniform erosion shape of target and film deposition uniformity on wafer were important. In this thesis, we studied the relationship of effective potential and target erosion profiles. We simulated the film deposition profiles on wafer based on the flux simulation. Also we investigated the effect of parameters such as pressure, power, Target-Substrate distance and sputtering time on film deposition through experiments.
Sputtering magnet assembly includes a plate-shaped pole piece made from a magnetically permeable material and a central magnet positioned substantially at the center of the pole piece and oriented so that its north-south magnetic orientation was substantially perpendicular to the plate shaped pole piece. A plurality of outer magnets were positioned around the centeral magnet, each of which has its north-south magnetic orientation also perpendicular to the pole piece, but opposite of the orientation of the central magnet.
Target erosion profiles were measured by the surface profiler, and the film deposition thickness was measured by α-step. Target erosion profiles were predicted by effective potential in case that north-south magnetic orientation of magnet was substantially perpendicular to the plate shaped pole piece. The Stronger magnetic field strength, the more fast sputtering rate. Target erosion profiles were independent of the impressed power. Experimental deposition profiles agreed with results of the flux simulation at low pressure. Difference between experimental data and simularion result increased with increasing pressure, target-substrate distance and discharge power.
In this thesis, we predicted target erosion profiles easily by effective potential and the film deposition profiles through the flux simulation.