서지주요정보
157 nm 광 리소그래피용 a-Si 박막과 Si-O-N 박막의 광학 특성 분석 = Optical properties of a-Si films and Si-O-N films for 157 nm optical lithography
서명 / 저자 157 nm 광 리소그래피용 a-Si 박막과 Si-O-N 박막의 광학 특성 분석 = Optical properties of a-Si films and Si-O-N films for 157 nm optical lithography / 김성관.
저자명 김성관 ; Kim, Sung-Kwan
발행사항 [대전 : 한국과학기술원, 2003].
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소장정보

등록번호

8013994

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 03008

휴대폰 전송

도서상태

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반납예정일

초록정보

The expected minimum critical dimension (CD) of optical lithography (KrF (248 nm) and ArF (193 nm) laser optical lithography) is about 70 nm.(1) Due to limits of non-optical lithography technologies, optical lithography technology for $F_2$ laser (157 nm) was considered to lead the nano-lithography technologies for below 70 nm CD. And with decrease of wavelength used in optical lithography, resolution enhancement technologies (RET`s) such as phase shift mask (PSM), off Axis Illumination (OAI), optical proximity correction (OPC) were developed to decrease CD. Si-O-N-F was chosen as a High Transmittance attenuated phase shift mask (Ht-Att-PSMs) materials for 157 nm optical lithography. lito satisfy the requirements of transmittance and phase shift. The optical properties, composition and thickness of deposited Si-O-N-F films were analysed. Using the new mask structure of a-Si/Si-O-N-F/quart, the condition satisfying the requirements of transmittance and phase shift was confirmed. The optical properties of a-Si films and Si-O-N films in Deep Ultraviolet (DUV) region were analyzed using Spectroscopy Ellipsometry(SE) analysis. a-Si thin films having thickness of less 25 nm were deposited. From spectroscopic ellipsometry(SE) and AES analysis, it was analyzed that a-Si film consisted of two layers of SiOx(8 nm) and a-Si(824 nm). Using SE and UV spectroscopy analysis, Transmittance variation of a-Si films having different thickness in DUV region was researched and explained using SE analysis. And the blue shift of optical band gap was analyzed and explained using size effect of thickness. From analysis of optical properties, it was confirmed that a-Si film with high transmittance in DUV could be used as a passivation layer of Si-O-N-F film. In order to analyze the effects of composition on the optical properties of Si-O-N films, Si-O-N films having the same thickness (80 nm) and different composition were deposited. From SE analysis, it was analyzed that transmittance slope decreased and the refractive index increased with increase of N concentration.

서지기타정보

서지기타정보
청구기호 {MMS 03008
형태사항 vii, 90 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sung-Kwan Kim
지도교수의 한글표기 : 노광수
지도교수의 영문표기 : Kwang-Soo No
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 81-86
주제 157 nm 리소그패피
위상 변위 막
a-Si 박막
Si-O-N 박막
광학 특성
157nm lithography
phase shift mask
a-Si thin film
Si-O-N thin film
optical properties
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