서지주요정보
운모와 $CoSi_2/Si$ 기판들을 이용한 Si 전이막 성장연구 = Growth of transferable Si film using mica and $CoSi_2/Si$ substrates
서명 / 저자 운모와 $CoSi_2/Si$ 기판들을 이용한 Si 전이막 성장연구 = Growth of transferable Si film using mica and $CoSi_2/Si$ substrates / 박진우.
저자명 박진우 ; Park, Jin-Woo
발행사항 [대전 : 한국과학기술원, 2003].
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소장정보

등록번호

8014004

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 03018

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리뷰정보

초록정보

Thin crystalline Si layers are prospective for next generation solar cells due to low cost and for thin film transistors on plastic substrate in flat panel display. To make the thin-layer crystalline Si solar cells and transistors, a film transfer process is essential. The film transfer process consists of film growth on suitable substrates, separation of film from the substrate, and transfer of the film it to another substrate. In our work, mica and $CoSi_2$/Si substrates were used to grow Si thin film. Firstly we tested the thermal stability of mica substrates. In solid phase crystallization process, mica substrates were unstable at the annealing temperature of 600℃. So metal induced crystallization carried out at lower crystallization temperature. Amorphous Si films were deposited at 200℃ by plasma enhanced chemical vapor deposition on mica substrate. A 0.1M Ni solution was coated on the amorphous Si films by spin coater. These films were crystallized at 500℃ and for 10 hr in a furnace. These films were completely crystallized without cracks. A mica is layer structure so we could delaminate the mica substrate after transferring the film to the plastic substrate. Secondly, the $CoSi_2$ layers were grown in situ on a Si substrate by metal organic chemical vapor deposition. For thin $CoSi_2$, the uniform epi-Si growth was possible. But the agglomeration of $CoSi_2$ was found for thick $CoSi_2$. The $CoSi_2$ layers were epitaxially grown on the Si substrates. Then an epi-Si layer was grown in coherent with $CoSi_2$/Si substrates by liquid phase epitaxy from 985℃ to 900℃ for 3hr. The $CoSi_2$ layer can be selectively etched by 1:50(HF:DI water)solution to the epi-Si layer and Si substrate after transferring the epi-Si to plastic substrate. Thirdly, we fabricated thin-layer crystalline Si solar cells by polishing a Si wafer. The $n^+pp^+$ and $n^+$p structure pn junctions were formed by ion showering and implantation, respectively. Also we simulated the wafer thickness influence on the photovoltaic characteristics of Si solar cell using PC1D and silvaco simulation tools. We fabricate a cell with the Si thickness of 50.8㎛ and characterized the photovoltaic characteristics.

서지기타정보

서지기타정보
청구기호 {MMS 03018
형태사항 [iii], 79 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jin-Woo Park
지도교수의 한글표기 : 안병태
지도교수의 영문표기 : Byung-Tae Ahn
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 77-79
주제 운모
전이막
코발트실리사이드
mica
transfer film
CoSi2
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