서지주요정보
탄소나노튜브의 저온 성장과 전계전자방출 특성 = Low temperature growth and field electron emission characteristics of carbon nanotubes
서명 / 저자 탄소나노튜브의 저온 성장과 전계전자방출 특성 = Low temperature growth and field electron emission characteristics of carbon nanotubes / 김재명.
저자명 김재명 ; Kim, Jae-Myung
발행사항 [대전 : 한국과학기술원, 2002].
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소장정보

등록번호

8013679

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 02041

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Since the first observation of carbon nanotubes(CNTs) in 1991, extensive research has been done on the synthesis methods and its applications. Among the synthesis methods, chemical vapor deposition(CVD) has many advantages such as high purity, high yield, simple process, selective growth, vertical alignment and large area uniformity. The reaction temperature of thermal CVD is generally as high as 700-1000℃. One of most attractive applications of CNTs is an electron emitter for flat panel displays such as field emission display(FED), vacuum fluorescent display(VFD). In order to apply directly grown CNTs by CVD method to an electron emitter on the soda-lime glass substrate, the growth temperature must be lower than 550℃. Soda-lime glass, which has softening at 550℃, is commonly used as the substrate of flat panel displays because of low price and good vacuum sealing. Because of this temperature limitation, most of researcher used pre-made CNTs by arc discharge method as an electron emitter. In this work, a new fabrication method was suggested to grow CNTs at lower temperature than 550℃. It is not only simple growth technic but also applicable to mass production. Ag thick films were coated using screen printing method on the glass substrates. One of coating method for Ni catalyst was electro-plating on the Ag film and another method was Ni powder mixing with Ag paste. CNTs were grown on the Ni catalyst by thermal CVD from 500 to 550℃. CNTs were analysed with SEM, TEM, Raman, α-step and field emission tester. Low temperature(500-550℃) grown CNTs reveal poor crytallinity, but have a good field emission characteristics. The turn-on fields were about 2.5-3.5 V/μm with an emission current density of 10 μA/㎠, and the threshold fields were about 3.8-4.5 V/μm with an emission current density of 1 mA/㎠, and β factors were about 3000-4000. Fowler-Nordheim plots showed good linear fit, indicating that the emission current of CNTs followed the Fowler-Nordheim behavior. In order to increase the electron emission with low edge emission, total emitted current density and edge emission factor of CNTs were simulated by the variation of CNTs inter-distance and cell-gap. The total emitted current density was maximized at the condition of CNTs inter-distance is about 2-3 times of CNT length. At the high CNT density condition, electric field screening effect of neighboring CNTs deeply influenced limitation of local electric field on the CNT tip. To reduce edge emission, the lower cell-gap was necessary, but arcing and electric short problems were occurred at the very small cell-gap. After all, the optimum cell-gap was about 2-3 times of CNT length.

서지기타정보

서지기타정보
청구기호 {DMS 02041
형태사항 x, 97 p. : 삽도; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jae-Myung Kim
지도교수의 한글표기 : 노광수
지도교수의 영문표기 : Kwang-Soo No
수록잡지명 : "Growth and field emission of carbon nanotubes on electroplated Ni catalyst coated on glass substrates". Journal of applied physics, v.90 n.5, pp.2591-2594 (2001)
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 95-97
주제 탄소나노튜브
저온 성장
전계전자방출
전계방출 표시소자
유리 기판
carbon nanotube
low temperature growth
field electron emission
field emission display(FED)
glass substrate
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