서지주요정보
SiGe BiCMOS 공정을 이용한 IMT2000 단말기용 송신부 MMIC 설계 = Design of transmitter MMIC for IMT2000 handset application using SiGe BiCMOS Technology
서명 / 저자 SiGe BiCMOS 공정을 이용한 IMT2000 단말기용 송신부 MMIC 설계 = Design of transmitter MMIC for IMT2000 handset application using SiGe BiCMOS Technology / 이희동.
발행사항 [대전 : 한국과학기술원, 2002].
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소장정보

등록번호

8013557

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 02099

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초록정보

A transmitter MMIC was designed for IMT2000 handset application using SiGe BiCMOS technology that is suitable for high-speed and high-frequency circuits. The transmitter MMIC composed of an up-conversion mixer(up-mixer) and a driver amplifier. Two up-mixers were designed. One is a DSB(double sideband) mixer that has RF outputs of the desired sideband and the unwanted sideband(image band). But, the other is a SSB(single sideband) mixer that has only RF output of the desired sideband. The designed up-mixers are based on the Gilbert active topology. The simulation results of two up-mixers are similar. But, a SSB mixer has a image band suppression of more than 35 dB. Driver amplifier was designed as variable gain amplifier(VGA) to control output power level. The designed driver amplifier has a linear-in-dB gain characteristic, include compensation circuit for temperature and supply voltage variation of the gain. The simulation results of driver amplifier indicate the gain control range of more than 34dB, the gain of 25.9dB, the output IP3 of 27.5dBm, and 30mA current consumption from a 3V supply voltage.

서지기타정보

서지기타정보
청구기호 {MEE 02099
형태사항 iii, 65 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hui-Dong Lee
지도교수의 한글표기 : 홍성철
지도교수의 영문표기 : Song-Cheol Hong
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공,
서지주기 참고문헌 : p. 61-62
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