서지주요정보
강유전체 랜덤 억세스 메모리(FRAM)용 Pt/Ti 전극에서 Pt hillock 생성기구 = Pt hillock formation mechanism of Pt/Ti electrode for ferroelectric random access memory
서명 / 저자 강유전체 랜덤 억세스 메모리(FRAM)용 Pt/Ti 전극에서 Pt hillock 생성기구 = Pt hillock formation mechanism of Pt/Ti electrode for ferroelectric random access memory / 정원웅.
저자명 정원웅 ; Jung, Won-Woong
발행사항 [대전 : 한국과학기술원, 2002].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8013537

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 02048

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

The FRAM(Ferroelectric Random Access Memory) has already been recognized as the best-performing device used for multimedia products, for it has non-volatility, the fast read/write speed, and the compatibility with silicon process. However, it has been considered over the past few years that electrodes play a major role in determining the device properties and performance. In some cases, the effect of the electrode brings about modifications of the microstructure of the ferroelectric film. Moreover, the electrode directly controls the properties of ferroelectric capacitor. The ferroelectric layer must be annealed in oxygen atmosphere to form a ferroelectric crystallization after deposition. This directly limits the choice of electrodes, particularly those for the bottom electrodes. In this view, platinum (Pt) is one of the most promising candidates for the bottom electrodes of ferroelectric thin film. Nevertheless, the adhesion of platinum to substrates such as silicon-oxide (SiOx) is poor. Therefore, titanium (Ti) glue layer has typically been used. The Pt/Ti electrode stack deposited by the sputtering method tends to have a major instability problem, i.e., Pt hillock formation. Pt hillocks are a major concern because they can lead to short-circuit-failure of capacitor. It has been widely known that the hillock formation can release the compressive stress generated during both deposition and post-annealing. It is revealed by measuring stress-temperature curve that three factors are considered in the total stress generated during both deposition and post-annealing in Pt/Ti electrode stack: intrinsic stress, thermal stress and extrinsic stress. The height of Pt hillock is dependent on temperature and the thickness of Pt thin film by the analysis of high temperature XRD pattern and SEM image. Therefore, the main mass transport mechanism of pt hillock is expected to be grain boundary diffusion.(P chaudhari, 1969). The Pt thin film deposited by sputtering method has (111) preferred orientation but Pt hillock grains have (200) orientation. So TEM high resolution image confirm that Pt hillock termination plane is lowest surface energy (111) and growth plane is (200).

서지기타정보

서지기타정보
청구기호 {MMS 02048
형태사항 iii, 55 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Won-Woong Jung
지도교수의 한글표기 : 최시경
지도교수의 영문표기 : Si-Kyung Choi
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 54-55
주제 Pt hiilock 생성기구
Pt hillock formation mechanism
QR CODE qr code