Tin-doped indium oxide(ITO) thin films were deposited on corning glass #1737 substrates by R.F. magnetron sputtering at 100℃ using an $In_2O_3$-10wt%Sn ceramic target. Argon was introduced near the substrate. The films were deposited in the working pressure from 2mTorr to 10mTorr.
The resistivity was varied with working pressures. It was the lowest at the point of 2mTorr. Hall effect measurement analysis were done to understand the variation of the sheet resistance. It was found that carrier mobility is a dominant factor for controlling the sheet resistance more than the carrier concentration in the optimum range.
The intrinsic stress with working pressures at the lower substrate temperature(100℃) were analyzed by X-ray diffraction method. Intrinsic stress was the highest compressive stress in the 2mTorr. It was explained by atomic bombardment effect. GIXR(grazing incidence X-ray reflectivity)method was used to investigate the variation of the density at 100℃. The density was near the theoretical density in the 2mTorr, and 6.86g/㎤.
In this study, it was found that the resistivity of the ITO thin films at low temperature was depended on atomic bombardment effect by working pressure control. But we could not obtain ITO films of low resistivity($∼10^{-4}Ω·cm$) at 100℃.
