서지주요정보
두께 및 플라즈마 처리가 Anatase $TiO_2$ 박막의 전기적 특성에 미치는 영향 = Effect of thickness and plasma treatment on electrical properties of Anatase $TiO_2$ films
서명 / 저자 두께 및 플라즈마 처리가 Anatase $TiO_2$ 박막의 전기적 특성에 미치는 영향 = Effect of thickness and plasma treatment on electrical properties of Anatase $TiO_2$ films / 장준기.
저자명 장준기 ; Jang, Jun-Gee
발행사항 [대전 : 한국과학기술원, 2002].
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소장정보

등록번호

8012922

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 02031

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

$TiO_2$ thin films were deposited on corning glass and P type Si wafer by DC reactive magnetron sputtering using Ti metal target at 300℃ and oxygen/argon flow ratio is 10%. The experiment was practiced with thickness of the films increasing. Anatase structure is observed from X-ray diffraction pattern. And there is no different X-ray diffraction pattern with thickness. Refractive index abruptly increases about 100nm thickness and decrease as thickness increase. Dielectric constant also increases as thickness increases. Breakdown field decrease as the thickness of $TiO_2$ thin films increase. The density and roughness was measured by GIXR (Grazing Incidence X-ray Reflectivity) method and AFM (atomic force microscopy). Breakdown field is range of 0.1~0.5MV/cm. It is not high to use insulator layers for gate oxide of MOS or ELD (Electro-Luminescent Device). So $N_2O$ plasma treatment is used to increase breakdown field of the films. After plasma treatment, leakage current properties are improved and breakdown field increases and dielectric constant decreases. Roughness decreases also. But there is no different FWHM (Full Width at Half Maximum) of A (101) peak, X-ray diffraction pattern between as deposited film and plasma treated film. So roughness is considered to be main factor related to results above.

서지기타정보

서지기타정보
청구기호 {MMS 02031
형태사항 iii, 60 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jun-Gee Jang
지도교수의 한글표기 : 최시경
지도교수의 영문표기 : Si-Kyung Choi
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 58-60
주제 두께
플라즈마 처리
$ Anatase TiO_{2} $
유전률
thickness
plasma treatment
$ Anatase TiO_{2} $
dielectric constant
breakdown field
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