서지주요정보
실리콘 팁의 코발트 실리사이드와 질화물 코팅에 의한 전계 방출 및 파괴 거동에 관한 연구 = A study on the field emission and failure behaviors of silicon tip arrays with Co-Silicide and Nitride coating layers
서명 / 저자 실리콘 팁의 코발트 실리사이드와 질화물 코팅에 의한 전계 방출 및 파괴 거동에 관한 연구 = A study on the field emission and failure behaviors of silicon tip arrays with Co-Silicide and Nitride coating layers / 한병욱.
저자명 한병욱 ; Han, Byung-Wook
발행사항 [대전 : 한국과학기술원, 2001].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8012559

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 01036

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

For vacuum microelectronic devices to be used in flat panel displays, a low turn-on voltage and stable emission currents are required for the field emitter. Spindt-type metal emitters are commonly employed for field emission displays. However, silicon emitters have been the subject of intense study by many researchers due to the extensive knowledge which exists concerning the process compatibility with integrated circuits. Silicon emitters have certain inherent problems such as relatively poor electrical conductivity, poor thermal conductivity, and easy formation of insulting oxide on the surface. To solve these problems surface modifications such as metal coating, diamond-like carbon film coating, silicide coating, and nitride coating have been performed. Among them, metal-silicide emitters significantly enhanced emission current and stability. But generally, the formation of a metal-silicide structure on silicon emitters requires two steps, such as metal deposition and conversion to silicide by thermal annealing at high temperature. In the case of cobalt silicide, a capping layer on Co metal is required to prevent the formation of oxide during thermal annealing. In this study, we coated a $CoSi_2$ layer in situ on a Si emitter tip at 650℃ from a cobalt metalorganic source by reactive chemical vapor deposition (CVD) to simplify the tip-coating process. CVD commonly offers advantages such as a uniform and conformal deposition over a large area. A $CoSi_2$ layer was grown at a lowered process temperature to 650℃, and epitaxially grown on a Si tip in the partial region. The $CoSi_2$-coated Si emitters showed an enhanced emission due to the increase in the number of emitting sites and decrease of work function from the Fowler-Nordheim plot. The fluctuation of emission currents was reduced by the $CoSi_2$ coating. But the long-term stability was not much improved, which may be due to the agglomeration of $CoSi_2$ near the apex during dc bias stress. To enhance the long-term stability, TiN having better high temperature stability than $CoSi_2$ was coated on Si tip. The TiN coating greatly reduced the turn-on voltage and improved the long-term stability because TiN has a low work function, high melting point (2950℃) and high thermal conductivity. But TiN did not increase the emission current to a level as high as the $CoSi_2$ coating due to the higher electrical resistivity than that of $CoSi_2$. The merits of $CoSi_2$ and TiN, high emission current by $CoSi_2$ and low turn-on voltage and long-term stability by TiN can be utilized for field emitter arrays(FEAs) via the introduction of a $CoSi_2$/TiN bilayer coating. The $CoSi_2$ layer was conformally coated on the Si tips and the TiN layer well adhered to the $CoSi_2$ layer. The $CoSi_2$/TiN coated emitters showed a low-turn voltage due to the low work function by TiN a steep current increase caused by $CoSi_2$. The current fluctuation of $CoSi_2$/TiN-coated Si emitter was smaller than that of TiN-coated emitter. The long-term emission stability of $CoSi_2$/TiN coated Si emitter was greatly improved compared to the $CoSi_2$ coated emitter because of the superior high temperature stability of TiN layer.

서지기타정보

서지기타정보
청구기호 {DMS 01036
형태사항 xii, 204 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Byung-Wook Han
지도교수의 한글표기 : 안병태
지도교수의 영문표기 : Byung-Tae Ahn
수록잡지명 : "Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition on Si tips and its field-emission properties". J. Vac. Sci. Technol. B , 19(2), Mar/Apr, pp.533-536 (2001)
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 수록
주제 실리콘 팁
코발트 실리사이드
질화물
전계 방출
파괴 거동
silicon tip
Co-Silicide
Nitride
field emission
failure behaviors
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