서지주요정보
반응성 CVD를 이용한 다결정 실리콘 기판에서의 $CoSi_2$ layer의 성장거동과 열적 안정성에 관한 연구 = Growth behavior and thermal stability of $CoSi_2$ layer on poly-Si substrate using reactive chemical vapor deposition
서명 / 저자 반응성 CVD를 이용한 다결정 실리콘 기판에서의 $CoSi_2$ layer의 성장거동과 열적 안정성에 관한 연구 = Growth behavior and thermal stability of $CoSi_2$ layer on poly-Si substrate using reactive chemical vapor deposition / 김선일.
저자명 김선일 ; Kim, Sun-Il
발행사항 [대전 : 한국과학기술원, 2001].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8012424

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 01038

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Uniform polycrystalline $CoSi_2$ layers have been grown in situ on a polycrystalline Si substrate at temperature ranging from 600℃ to 650℃ by reaction chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, $(C_5H_5)Co(CO)_2$. The growth behavior and thermal stability of $CoSi_2$ layer on polycrystalline Si substrates were investigated. A TiN interlayer was introduced between $CoSi_2$ layer and polycrystalline Si substrates to improve the thermal stability of the $CoSi_2$ layer. X-ray diffraction and transmission electron diffraction analysis showed that the plate-like $CoSi_2$ spikes were initially formed in coherent with either {111}, {220} or {311} interface of polycrystalline Si grain. A uniform epitaxial $CoSi_2$ layer was grown from the discrete $CoSi_2$ plate, where the orientation of the $CoSi_2$ layer is same as the orientation of polycrystalline Si grain. But the interface between $CoSi_2$ layer and polycrystalline Si substrate was always {111} coherent. The thickness of the uniform $CoSi_2$ layer had a parabolic relationship with the deposition time. The growth behavior of $CoSi_2$ layer on amorphous Si substrate was also investigated. In initial deposition stage, $CoSi_2$ was nucleated at random sites and grown in spherical shapes. The $CoSi_2$ layer on amorphous Si substrate has smaller grains size and larger interface roughness than that on polycrystalline Si substrate. The thermal stability of $CoSi_2$ layer on small grain-sized polycrystalline Si has been investigated using sheet resistance measurement at temperature from 800℃ to 1000℃. The amorphous Si and TiN layer were used to improve the thermal stability of $CoSi_2$ layer. When the $CoSi_2$ layer was prepared from the reactive chemical vapor deposition on amorphous Si, the $CoSi_2$/poly-Si gate electrode has poor thermal stability. When a TiN layer of 35nm thickness was introduced between these two layers, the sheet resistance of $CoSi_2$/TiN/poly-Si was not significantly changed even at 1000℃, indicating that the TiN interlayer improved thermal stability of $CoSi_2$ layer on polycrystalline Si substrate. The stability improvement is due to minimizing the diffusion of Co by the TiN layer.

서지기타정보

서지기타정보
청구기호 {MMS 01038
형태사항 75 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sun-Il Kim
지도교수의 한글표기 : 안병태
지도교수의 영문표기 : Byung-Tae Ahn
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 73-75
주제 코발트 실리사이드
열적안정성
화학기상증착법
$CoSi_2$
thermal stability
chemical vapor deposition
TiN
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