서지주요정보
Quasi-Static C-V 측정 방법을 이용한 interface trapped charge에 관한 연구 = Study on the interface trapped charge using quasi-static C-V method
서명 / 저자 Quasi-Static C-V 측정 방법을 이용한 interface trapped charge에 관한 연구 = Study on the interface trapped charge using quasi-static C-V method / 김상호.
저자명 김상호 ; Kim, Sang-Ho
발행사항 [대전 : 한국과학기술원, 2001].
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소장정보

등록번호

8012439

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 01116

SMS전송

도서상태

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반납예정일

초록정보

In this thesis, interface trapped charges of PMOS, NMOS, and Pt/aluminum oxide/Si have been measured using quasi-static C-V method. Interface trapped charges are usually measured by capacitance-voltage(C-V), or conductance(G) method. Conductance method has been considered to be more sensitive than capacitance-voltage method, but when using this method, it isn't easy to evaluate the characteristics of interface between silicon and silicon oxide because it needs test-frequency variation in addition to the voltage variation. So, when monitoring the process variation, capacitance-voltage method is usually used. However, traditional method, high frequency C-V method(also, known as Terman method), has its limitation, typically, on the accuracy of the measurement. High frequency C-V method use the stretch-out of the C-V curve to extract the information of the interface trapped charge, but it is very negligible when the MIS structure show the interface trapped charge of $~10^{10}eV^{-1}cm^{-2}$. To overcome this limitation, quasi-static C-V method was proposed, and have several advantages over the high frequency C-V method, which include the contribution of interface trapped charge as a additional capacitance. After several examinations, quasi-static C-V method was found to have the accuracy of about $10^{10}eV^{-1}cm^{-2}$, which was slightly less than the conductance method(about $10^{9}eV^{-1}cm^{-2}$). With this range of accuracy, it is expected that the reliable extraction of the interface trapped charge is possible and this method can be used for the extraction of interface characteristics between silicon and insulator.

서지기타정보

서지기타정보
청구기호 {MEE 01116
형태사항 i, 32 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sang-Ho Kim
지도교수의 한글표기 : 이희철
지도교수의 영문표기 : Hee-Chul Lee
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공,
서지주기 참고문헌 수록
주제 알루미늄 산화막
강유전체
메모리
Pt-Al2O3-Pt
Aluminum oxide
Ferroelectric
Memory
Quasi-Static
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