The switching devices of transmissive AMLCD almost was amorphous or poly-Si thin film transistors, because single crystalline Si(single c-Si) transmissive AMLCD was difficult to be implemented. Through the electrochemical etching technique, which has strength in selective and self aligned etching properties, the possibility of easy implementation of single c-Si transmissive AMLCD was verified. Also new type of storage capacitor structure was proposed using a transmissive ITO layer for the common electrode, thus all area of pixel can be used for storage capacitor, resulting in high aperture ratio.
It was verified that the proposed structure and process can be used for transmissive AMLCD panel but the thin layers of pixel area with n-well Si was too weak to stand the pressure of Liquid Crystal. By making up for the weak structure of the single c-Si transmissive AMLCD, the full functional single c-Si transmissive AMLCD could be implemented.
