서지주요정보
$64 \times 64$ 화소의 투과형 단결정 실리콘 AMLCD 패널의 제작 = Fabrication of single crystalline Si transmissive AMLCD panel with $64 \times 64$ pixels
서명 / 저자 $64 \times 64$ 화소의 투과형 단결정 실리콘 AMLCD 패널의 제작 = Fabrication of single crystalline Si transmissive AMLCD panel with $64 \times 64$ pixels / 최영준.
발행사항 [대전 : 한국과학기술원, 2001].
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등록번호

8011962

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 01103

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초록정보

The switching devices of transmissive AMLCD almost was amorphous or poly-Si thin film transistors, because single crystalline Si(single c-Si) transmissive AMLCD was difficult to be implemented. Through the electrochemical etching technique, which has strength in selective and self aligned etching properties, the possibility of easy implementation of single c-Si transmissive AMLCD was verified. Also new type of storage capacitor structure was proposed using a transmissive ITO layer for the common electrode, thus all area of pixel can be used for storage capacitor, resulting in high aperture ratio. It was verified that the proposed structure and process can be used for transmissive AMLCD panel but the thin layers of pixel area with n-well Si was too weak to stand the pressure of Liquid Crystal. By making up for the weak structure of the single c-Si transmissive AMLCD, the full functional single c-Si transmissive AMLCD could be implemented.

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서지기타정보
청구기호 {MEE 01103
형태사항 ii, 43 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Young-Jun Choi
지도교수의 한글표기 : 한철희
지도교수의 영문표기 : Chul-Hi Han
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공,
서지주기 참고문헌 : p. 42-43
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