서지주요정보
고집적 FRAM용 LSCO/Ir/TaSiN 하부전극의 안정성에 관한 연구 = Stability of TaSiN diffusion barrier with LSCO/Ir hybrid bottom electrode for FRAM application
서명 / 저자 고집적 FRAM용 LSCO/Ir/TaSiN 하부전극의 안정성에 관한 연구 = Stability of TaSiN diffusion barrier with LSCO/Ir hybrid bottom electrode for FRAM application / 김명선.
저자명 김명선 ; Kim, Myung-Sun
발행사항 [대전 : 한국과학기술원, 2001].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8011784

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 01005

휴대폰 전송

도서상태

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대출가능

반납예정일

리뷰정보

초록정보

When ferroelectric layer in FRAM is being deposited, the bottom electrode and poly-Si plug which maintains direct contact with the bottom electrode are exposed to the highly oxidizing gas atmosphere with high temperature. This may lead to the oxidation of poly-Si plug leading to poor contact property with adjacent electrode degrading contact resistance. If there are reactions between layers, these will cause the films peeling off by large volume expansion and high leakage current of ferroelectric film due to rough surface morphology of electrodes. Therefore, instead of adapting single electrode as the bottom electrode in stack capacitor, it is quite desirable to insert additional layer that can suppress the O and Si diffusion and we call this extra layer, "diffusion barrier". The known barrier materials exists in different form such as TiN, TaN, TiAlN, WSiN, TaSiN. In this research, TaSiN is used because of its excellent oxidation resistance, simple preparation method and moderate resistivity. TaSiN has amorphous phase which lack of grain boundary that may act as fast diffusion path of unwanted atoms and maintains this phase up to 800℃.In this study, we have analyzed the thermal stability and electrical compatibility of the diffusion barrier with LSCO(La-Co-Sr-oxide) and Ir, Ru, Pt metal electrodes. All specimens were annealed with RTA from 500∼800℃ in $O_2$ atmosphere and thermal stability and interfacial characteristics were observed with XRD, SEM, AFM and TEM. As a result, no visible compound formation except for the metal oxides were found through entire annealing temperature indicating that no reaction has occurred between the existing layers. Electrical compatibility were tested using HP4145B semiconductor analyzer and four-point probe. LSCO/Ir/TaSiN/Poly-Si structure has been proven to possess good electrical property by calculating the linear resistance of the structure from the acquired I-V curve and the resistance value is 2∼6μΩ up to 700℃ annealing temperature. PZT film of 1000Å was deposited on LSCO/Ir/TaSiN/Poly-Si and P-E hysteresis curve and leakage current characteristics were observed using Precision Pro Material Analyzer and Keithly 617 Electrometer. As a result, the $2P_r$ value of $53.6μC/㎠$ and 1.5V coercive field were obtained. Also, the ferroelectric capacitor maintained the leakage current value of $10_{-8}A/㎠$ indicating that the LSCO/Ir/TaSiN/Poly-Si bottom electrode can be one of the possible bottom electrode structure in ferroelectric stack capacitor.

서지기타정보

서지기타정보
청구기호 {MMS 01005
형태사항 iv, 77 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Myung-Sun Kim
지도교수의 한글표기 : 김호기
지도교수의 영문표기 : Hi-Gi Kim
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 76-77
주제 확산방지막
TaSiN
Barrier
LSCO
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