A fully differential integrated single-chip VCO(Voltage Controlled oscilaator) for Bluetooth application is presented using 0.35㎛ SiGe BiCMOS process. Inductor block consists of spiral and bond-wire. This combination is advantage of Q and process variation. Varactor block consists of PMOS block and NMOS block. It is possible that we can do differential input control and common-mode noise rejection. Each PMOS(or NMOS) block is made of two MOS varactors placed in different bias conditions. This decreases the sensitivity of the control voltage of the varactors. Measurement performed on the complementary structure oscillator, powered by a 3.3 V supply. The oscillation frequency can be varied in the range 1.6 ~ 1.9 GHz. The measured phase noise at 600 kHz and 2 MHz offsets from a 1.7 GHz carrier are each -101 dBc/Hz, -117 dBc/Hz with 6mA current consumption.
