서지주요정보
Polyimide 위에 스퍼터 증착한 Cu 및 Cr 박막의 잔류응력에 관한 연구 = A study on the residual stress of sputter-deposited Cu and Cr thin films on polyimide
서명 / 저자 Polyimide 위에 스퍼터 증착한 Cu 및 Cr 박막의 잔류응력에 관한 연구 = A study on the residual stress of sputter-deposited Cu and Cr thin films on polyimide / 조성일.
발행사항 [대전 : 한국과학기술원, 2001].
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소장정보

등록번호

8011808

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 01029

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초록정보

In the microelectronics packaging, the adhesion strength between Cu and polyimide is a very important factor which determines the device performance and reliability. The adhesion strength of Cu film to polyimide is inherently poor and often the Cr layer is used as an interlayer between Cu and polyimide to enhance the adhesion properties. However, the residual stress of PI/Cr film is very high and cause grain-like surface crack of Cr films which lowers the adhesion strength and reliability of PI/Cr/Cu system. The curvature of the thin film structure is originated from the residual stress of the film. Laser profilometry is one of the general tool to estimate the residual stress of thin film by measuring the curvature. There are many theories which correlate the curvature to the residual stress of the film. Those have each simple assumptions like compliant film on rigid body or thin film approximation etc. But in this study, the rigid metal film on compliant polymer film, those assumptions are not available any more. In first part of this study, the residual stresses of Cr and Cu thin films which sputtered onto polyimide were measured with various Ar pressure and film thickness. At low Ar pressure, the residual stress of Cu thin film was compressive and it turned into tensile stress as Ar pressure increased. The tensile stress of Cu thin film increased with further Ar pressure increment and it decreased beyond some high Ar pressure level. The reason for this behavior can be explained by stress relaxation which attribute to the surface crack on Cu films. For all Ar pressure used in this experiment Cr films were tensile and had grain-like surface crack. As thickness of Cu or Cr thin film were increased, the residual stress decreased because of grain growth and stress relaxation mechanism. In second part of this study, the thermal cycling experiment was performed and the change of film curvatures of PI/Cr, PI/Cr/Cu systems with constant thermal stress was measured by digital camera image analysis. The relation between curvature and stress in this experiment was compared to various theories.

서지기타정보

서지기타정보
청구기호 {MMS 01029
형태사항 vi, 41 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sung-Il Cho
지도교수의 한글표기 : 유진
지도교수의 영문표기 : Jin Yu
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 39-40
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