Gunn oscillator oscillating at E-band is presented. GaAs and InP Gunn diode epi structure is designed and simulated using a semiconductor device simulator, Silvaco. GaAs and InP Gunn diode is fabricated. Test fixture for Gunn oscillator is simulated using a high frequency structure simulator and fabricated. The test fixture is tested using a commercial Gunn diode and measured DC and RF characteristics. Also pulsed RF measurement setup is equipped. GaAs Gunn diode and InP Gunn diode I-V characteristics is measured using a pulsed I-V measurement. From the results of the pulsed I-V measurement it is found out the fabricated GaAs and InP Gunn diode have severe heat problem. Heat sink has to be designed well for CW operation. This Gunn oscillator is applicable for anti-collision system.
