Selective epitaxial growth of GaAs by organometallic chemical vapor deposition is demonstrated. From the reactor analysis based on boundary layer model, some defaults of the reactor system are discussed and improved reactor design is proposed.
Some basic growth parameter (Growth rate, surface morphology, crystalline characteristic, and doping density) are found from basic experiments.
Rotation effects in selective epitaxial growth of GaAs are demonstrated. Selective characteristic of GaAs epitaxy is very sensitive to substrate rotation. Selective characteristic is maintained at low rpm range but in the high rpm range, poly-crystal is deposited on masked area. The poly-crystal deposited on the masked area is shown selective etching characeristic, and using this phenomenon, micro-hallow structure could be fabricated.
