서지주요정보
Multi-alicyclic polymers for application in 193 nm lithography = 다지환족 고분자의 합성과 193 nm 리소그라피용 레지스트로서의 응용
서명 / 저자 Multi-alicyclic polymers for application in 193 nm lithography = 다지환족 고분자의 합성과 193 nm 리소그라피용 레지스트로서의 응용 / Jai-Hyoung Lee.
저자명 Lee, Jai-Hyoung ; 이재형
발행사항 [대전 : 한국과학기술원, 2001].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8012159

소장위치/청구기호

학술문화관(문화관) 보존서고

DAME 01002

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Fully multi-alicylic polymers designed for use as 193nm photoresist materials are obtained by vinyl addition polymerization of tetracarbocyclic norbornene derivatives,t-butyl tetracyclo$[4.4.0.1.^{2,5} 1^{7,10}]$dodec-8-ene-3-carboxylate (t-BDN) and 3-acetoxytetracyclo$[4.4.0.1.^{2,5} 1^{7,10}]$dodec-8-ene (AcODN). The alicyclic polymer backbones of these polymers provide plasma etch resistance, good mechanical properties,and stability toward radiation. For the lithographic applications were provided by carefully tailored two kinds of pendant groups: t-butyl carboxylate group as a carboxylic acid functionality masked by a protecting group. The protecting group undergoes acid-catalyzed thermolysis. The acetoxy polar group influences adhesion, wettability and solubility properties of the polymers. The polymer showed an acceptable high transmittance at 193nm and good adhesion property. The plasma etch rates of the copolymer poly(t-BDN-co-AcODN) (85:15) by $CF_4/CHF_3$ mixed gas were 1.01 times with respect to a novolac based resist. 0.2-㎛ line-and-space patterns were obtained at a dose of $45 mJ cm^{-2}$ using KrF excimer laser stepper. The low UV absorption by the polymer at 193nm and its high resistance to reactive ion etching along with alkaline developability make these copolymers an attractive resist system for 193nm lithography.

서지기타정보

서지기타정보
청구기호 {DAME 01002
형태사항 xii, 96 p. : 삽도 ; 26 cm
언어 영어
일반주기 저자명의 한글표기 : 이재형
지도교수의 영문표기 : I-Whan Cho
지도교수의 한글표기 : 조의환
수록잡지명 : "Novel multi-alicyclic polymers for enhancing plasma etch resistance in 193 nm lithography". Polymer
학위논문 학위논문(박사) - 한국과학기술원 : 신소재공학학제전공,
서지주기 Reference : p. 89-96
주제 ArF Photoresist
Muti-alicyclic polymer
Norbornene derivatives
Dry-etching Resistance
ArF 레지스트
다지환족 고분자
노르보르넨 유도체
건식내에칭성
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