서지주요정보
D.C. 마그네트론 반응성 스퍼터링법으로 증착한 ITO박막에 있어서 고유응력, 배향성 그리고 밀도가 비저항에 미치는 영향 = Effect of density, intrinsic stress and crystallographic orientation on resistivity of ITO thin films deposited by D.C. magnetron reactive sputtering
서명 / 저자 D.C. 마그네트론 반응성 스퍼터링법으로 증착한 ITO박막에 있어서 고유응력, 배향성 그리고 밀도가 비저항에 미치는 영향 = Effect of density, intrinsic stress and crystallographic orientation on resistivity of ITO thin films deposited by D.C. magnetron reactive sputtering / 이정일.
저자명 이정일 ; Lee, Jung-Il
발행사항 [대전 : 한국과학기술원, 2000].
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소장정보

등록번호

8011085

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 00035

SMS전송

도서상태

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반납예정일

초록정보

Tin-doped indium oxide(ITO)thin films were deposited on quartz glass and corning glass #1737 substrates by D.C. reactive magnetron sputtering using an In-10wt%Sn alloy target. Oxygen was introduced near the substrate in order to reduce oxidation of target. Argon was done near the target. The films were deposited in the oxygen flow ratio from 8% to 16% and in the temperature from 100℃ to 200℃. The resistivity was little variation over 150℃. It was the lowest at the point of 12% oxygen flow ratio. The transmittance was kept over 85% beyond 12% oxygen flow ratio. Hall effect measurement and micro-structural analysis were done to understand the variation of the sheet resistance. It was found that carrier mobility is a dominant factor for controlling the sheet resistance more than the carrier concentration in the optimum range. The intrinsic stress and the orientation with oxygen flow ratio at the optimum substrate temperature(150℃) were analyzed by X-ray diffraction method. Intrinsic stress was the highest compressive stress in the optimum point(12% in the oxygen flow ratio). It was explained by micro-structure and reflected neutral flow ratio. Preferred orientation was (111). It was explained from the surface and strain energy calculation of the film. (111) orientation has lower strain energy plane than (100) and (110). GIXR(grazing incidence X-ray reflectivity)method was used to investigate the effect of the density at 150℃. The density was the highest in the optimum point with oxygen flow ratio. To relax compressive stress, the films were holded for 30min in the vacuum after deposition in the 150℃. Intrinsic stress of ITO thin films changed from compre-ssive stress to zero stress. Preferred orientation varied from (222) to (400) to reduce the strain energy. The density remained the highest value while the resistivity showed little change in the optimum point. In this study, it was found that the resistivity of the ITO thin films depended on film density not film orientation and stress.

서지기타정보

서지기타정보
청구기호 {MMS 00035
형태사항 iv, 74 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jung-Il Lee
지도교수의 한글표기 : 최시경
지도교수의 영문표기 : Si-Kyung Choi
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 70-74
주제 산화물 전극
응력
밀도
마그네트론 스퍼터링
ITO
Stress
Density
Magnetron sputtering
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