서지주요정보
(A) study on the deposition mechanism and characteristics of $Al_2O_3$ films deposited by atomic layer deposition using TMA and IPA = TMA와 IPA를 이용해 ALD법으로 증착된 $Al_2O_3$ 박막의 증착 기구와 특성에 관한 연구
서명 / 저자 (A) study on the deposition mechanism and characteristics of $Al_2O_3$ films deposited by atomic layer deposition using TMA and IPA = TMA와 IPA를 이용해 ALD법으로 증착된 $Al_2O_3$ 박막의 증착 기구와 특성에 관한 연구 / Sung Yang.
저자명 Yang, Sung ; 양성
발행사항 [대전 : 한국과학기술원, 2000].
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소장정보

등록번호

8011078

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 00028

SMS전송

도서상태

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반납예정일

초록정보

$Al_2O_3$ is considered as the most promising alternative to $SiO_2$ for a gate dielectric materials in future Si-based integrated circuits owing to its high dielectric constant and low leakage current. In this study, amorphous $Al_2O_3$ films on p-Si(100) at 250 ℃ have been successfully grown by atomic layer deposition (ALD) using $Al(CH_3)_3$ [trimethylaluminum: TMA] and $C_3H_8O$ [isopropylalcohol: IPA]. TMA is a conventional Al precursor but IPA isn't conventional O precursor. Even though $H_2O$ is a conventional oxygen precursor to deposit $Al_2O_3$ using ALD, in this thesis, IPA was used to oxygen precursor. The main reason of IPA selection will be discussed in later. The film growth kinetics were studied using the concept of ALD and also excellent film characteristics were confirmed. The ALD temperature range for $Al_2O_3$ using TMA and IPA was between 230 ℃ ∼ 290 ℃. In order to acquire the best ALD condition for $Al_2O_3$ deposition using TMA and IPA at 250 ℃, $P_{TMA}$=0.01 torr, $P_{IPA}$=0.1 torr, the behaviors of deposition thickness/cycle with TMA pulse time and deposition thickness/cycle with IPA pulse time have been investigated. The set of minimum pulse times to get the fully saturated deposition thickness/cycle was (TMA pulse =2s,IPA pulse = 1s) and also, at the optimal condition, the fully saturated deposition thickness/cycle was around 0.8 Å/cycle, which corresponds to 0.37 ML (monolayer)/cycle. Also, refractive index of $Al_2O_3$ films has 1.61 ∼ 1.62. The refractive index of $Al_2O_3$ films were affected by IPA pulse time but not affected by TMA pulse time. Also, an ideal linear relationship between the number of cycles and the film thickness was confirmed. The compositions of deposited films were investigated by x-ray photoelectron spectroscopy (XPS) and also, the carbon incorporations into the films were analyzed by secondary ion mass spectroscopy (SIMS). The results of these studies shows almost stoichiometric $Al_2O_3$ films with slightly oxygen rich phase $(Al_2O_{3.1})$ and also there were no carbon incorporations into the films, i.e. SIMS results showed the detection limits values. Structure of $Al_2O_3$ films were studied by x-ray diffraction (XRD) method. The results showed us that all films have amorphous structure regardless of annealing treatments. Surface morphology was also investigated by atomic force microscopy (AFM). Surface morphology of ALD $Al_2O_3$ films was as smooth as RMS roughness values of a few Å regardless of annealing treatments. These smooth surface of $Al_2O_3$ films indicated that the ALD process is the best choice to deposit ultra-thin layer with smooth surface. The analysis of interfacial regions of $Al_2O_3$/Si was studied by XPS and transmission electron microscopy (TEM). For the as-deposited $Al_2O_3$ film, there was no parasitic $SiO_2$ at the interfacial regions of $Al_2O_3$/Si even though there were parasitic $SiO_2$ at the interfacial regions of $Al_2O_3$/Si for the cases of the annealed $Al_2O_3$ films. The electrical properties of $Al_2O_3$ films were investigated by I-V, C-V measurements. The leakage current values of $Al_2O_3$ films were as low as $10^{-8}A/cm^2$. This low leakage value is desirable for sub-0.2 ㎛ design rule applications. Also, the dielectric constants of $Al_2O_3$ films were as high as 9.66, 10.29 for the O2-annealed and the Ar-annealed $Al_2O_3$ films, respectively. These high dielectric constant values correspond to the equivalent oxide thicknesses of 31.9 Å and 29.9 Å, for 80 Å-thick films, respectively. In general, since the equivalent oxide thickness required in sub-0.2 ㎛ design rule applications is about 26 Å, if $Al_2O_3$ film with thickness less than 70 Å is fabricated, $Al_2O_3$ film will be adopted in sub-0.2 ㎛ design rule applications. $Al_2O_3$ film prepared by ALD using TMA and IPA gave us possibility to use $Al_2O_3$ film as a dielectric material for sub-0.2 ㎛ design rule applications.'

서지기타정보

서지기타정보
청구기호 {MMS 00028
형태사항 xiii, 136 p. : 삽도 ; 26 cm
언어 영어
일반주기 Appendix : Programming of I-V & C-V interfacing
저자명의 한글표기 : 양성
지도교수의 영문표기 : Sang-Won Kang
지도교수의 한글표기 : 강상원
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 Reference : p. 134-136
주제 Gate dielectrics
Alumina
TMA
IPA
Atomic layer deposition
게이트 유전체
알루미나
TMA
IPA
원자단위 증착
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