서지주요정보
화학증착법으로 제조한 다이아몬드막과 Si 기지에서의 응력해석에 관한 연구 = A study on the stress analysis of CVD diamond films on Si substrate
서명 / 저자 화학증착법으로 제조한 다이아몬드막과 Si 기지에서의 응력해석에 관한 연구 = A study on the stress analysis of CVD diamond films on Si substrate / 손윤철.
저자명 손윤철 ; Sohn, Yoon-Chul
발행사항 [대전 : 한국과학기술원, 2000].
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8011076

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 00026

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Diamond films thinner than 10㎛ were grown on the P-type Si substrate using the hot filament chemical vapor deposition method under $CH_4/H_2$ gas mixture. Young's modulus of the films were subsequently measured by sonic resonance method and 4 point bending method. The measurements showed that the Young's modulus of the films increased with film thickness when the film thickness was smaller than 4㎛ and that the Young's modulus of 2% $CH_4$ specimen was larger than that of 3% $CH_4$ specimen. This trend resulted from the densification of the diamond films which was driven by intrinsic stress accumulation with film thickness increased. Driving forces of the intrinsic stress accumulation were grain growth, decrease of the vacancy and nondiamond concentration. Curvatures at deposition temperature were deduced by subtracting the curvature changes during the cooling process from the measured curvatures at room temperature. Using this in-situ curvatures and the film thickness with the deposition time, an elastic analysis and an elastic/plastic analysis on the diamond films & Si substrate were made. The elastic analysis reasonably explained the stresses of the films when the film thickness was smaller than 10㎛. As films were thicker than 10㎛, the elastic/plastic analysis considering the stress relaxation of the substrate were needed for accurate calculation of the film stresses. In both cases, the average stress in the film tended to saturate around 10㎛ but the intrinsic stress kept increasing during the CVD process. Saturation of the average stress resulted from the balance between the film stress relaxation by bending and the stress build-up by the intrinsic stress development. The monotonic increase of intrinsic stress suggested that microstructural evolution which drove the intrinsic stress, such as vacancy annihilation and grain growth, were under way throughout the whole film growth process.

서지기타정보

서지기타정보
청구기호 {MMS 00026
형태사항 vii, 52 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Yoon-Chul Sohn
지도교수의 한글표기 : 유진
지도교수의 영문표기 : Jin Yu
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 50-52
주제 다이아몬드막
화학증착법
실리콘 크리프
고유응력
영계수
Diamond film
HFCVD
Si creep
Intrinsic stress
Young's modulus
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