We investigated the effect of residual gas partial pressure on the property of $CeO_2$ buffer layer on a textured Ni tape, where the buffer layer was deposited by e-beam evaporation. The oxygen partial pressure were varied from $10^{-7}$ to $10^{-5}$ Torr during deposition. We also changed the condition for the surface oxygenation. and we studied the crack in the $CeO_2$ buffer layer. We found that $CeO_2$ film XRD peak is shifted in the air. This results indicated that $CeO_2$'s oxygen is poor in the vaccum chamber. The change CeOx to $CeO_2$ results to lattice reduction. So crack is formed. We'll describe the detail of the resultant textures of the buffer layers and effects of YBCO growth on them.
