서지주요정보
파묻힌 Al-산화막을 이용한 GaAs quantum well intermixing = GaAs quantum well intermixing using a buried Al-oxide layer
서명 / 저자 파묻힌 Al-산화막을 이용한 GaAs quantum well intermixing = GaAs quantum well intermixing using a buried Al-oxide layer / 김규상.
저자명 김규상 ; Kim, Kyu-Sang
발행사항 [대전 : 한국과학기술원, 1999].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8010410

소장위치/청구기호

학술문화관(문화관) 보존서고

MPH 99033

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

A laterally selective interdiffusion enhancement of GaAs/AlGaAs quantum well using a buried Al-oxide layer is investigated with a selectively oxidized region. The defects within the interface of Al-oxide layer make 3-group elements interdiffusion be enhanced. To examine the effect of QW interdiffusion enhancement, the samples were patterned into 200㎛ wide stripe mesas and oxidized 50 ㎛ with each side. Annealing temperature was 950℃ ± 5℃. And to measure the QW energy shift, Photoluminescence peak wavelength shifts were detected. PL peak shifts of QW under Al-oxide layer region is twice as much as that of QW under AlAs layer region. In case of annealing time being 120 sec, PL peak shift of QW under Al-oxide region is about 54 meV with compared to that of as-grown. Using the Fick's diffusion equation, modulation of QW shape after annealing was induced from the data of PL peak shifts. Diffusivity of QW under Al-oxide and AlAs region are about $1.3\sim 1.7\times 10^{-16cm^2/s$ and $0.5\sim0.9\times 10^{-16}cm^2/s$ respectively.

서지기타정보

서지기타정보
청구기호 {MPH 99033
형태사항 ii, 35 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Kyu-Sang Kim
지도교수의 한글표기 : 이용희
지도교수의 영문표기 : Yong-Hee Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 34-35
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