This paper gives the approach to the prediction of MOSFET response in space environments from the calibration of RADFET using $Co^60$ γ-ray source.
When a MOS device is irradiated, charges buildup in the oxide and new interface ststes are also created. The threshold voltage shift due to these traps was measured by Ⅰ-Ⅴ curves and the effect of these traps on the threshold voltage was separated with the assumption that mobility degradation in channel is predominantly due to interface traps. Radiation-induced trapped hole and interface traps are very sensitive to the change of temperature. The effect of the temperature during irradiation is investigated over the temperature range, 20℃ to 80℃.