서지주요정보
Polishing process of silicon wafer using silica dispersion = 실리카 분산을 이용한 실리콘 웨이퍼의 연마공정
서명 / 저자 Polishing process of silicon wafer using silica dispersion = 실리카 분산을 이용한 실리콘 웨이퍼의 연마공정 / Sun-Hyuck Bae.
저자명 Bae, Sun-Hyuck ; 배선혁
발행사항 [대전 : 한국과학기술원, 1999].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8009421

소장위치/청구기호

학술문화관(문화관) 보존서고

MCHE 99014

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Since a rapid development of technics in electronics and communication industry in twentieth century, silicon wafer which was manufactured from ingot as sliced has been a basic material in semiconductor fabrication industry. After slicing step wafer polishing was needed to remove surface damage occcurred by slicing and maintain a uniform wafer thickness and smooth wafer surface. Used as a polishing abrasive in wafer polishing process, silica slurry was fabricated with dispersing 20 ~200 nm size of silica particles into a high-purity alkali solution. In this study, silica particles were prepared using particle growth of fumed silica and colloidal silica as seeds by sol-gel method to control various sizes of particles and produce economically competitive goods. And it was an alternative to the silica particle manufacturing method suggested by St$ö$ber et al. which was a combination of hydrolysis and condensation of monomeric, tetrafunctional alkoxide precursors. In the case of colloidal silica like commercial Ludox, it was not adequate to an abrasive slurry of wafer polishing because of containing so small size of no more than 20 nm silica particles and metal ions such as $Na^+$ or $K^+$ etc. used for particles stabilizer. And in the case of fumed silica like Aerosil, it had too broad size distribution and irregular shapes of particles although it had a adequate size of 40 ~50 nm primary particles. For that reason, in this study particles were grown with hydrolysis and condensation of silica alkoxide, or Tetraethylorthosilicate (TEOS), and water using pre-treated fumed or colloidal silica particles as seeds. And sequentially alcohol-base solvent of silica slurry was substituted for water-base one and additives was added to accelerate a polishing rate or stabilize a particle dispersion electrostatically or sterically. And next these slurries were tested with one-armed polisher to compare with reference slurries, namely Nalco2371 G3900 which are commonly used ones for stock removal and final polishing. Surface roughness of polished wafer was analyzed by AFM (Atomic Force Microscope). As a result, the slurry with similar or better performance than commercial one was fabricated.

서지기타정보

서지기타정보
청구기호 {MCHE 99014
형태사항 ix, 76 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : 배선혁
지도교수의 영문표기 : Seung-Man Yang
공동교수의 영문표기 : Do-Hyun Kim
지도교수의 한글표기 : 양승만
공동교수의 한글표기 : 김도현
학위논문 학위논문(석사) - 한국과학기술원 : 화학공학과,
서지주기 Reference : p. 74-76
주제 Silica slurry
Wafer polishing
Silica dispersion
실리카 슬럴리
웨이퍼 연마
실리카 분산
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