서지주요정보
라디오파 집적회로를 위한 감압 화학기상증착 장비를 이용한 규소게르마늄 이종접합 쌍극자트랜지스터 = Reduced-pressure CVD-grown SiGe base HBTs for RF applications
서명 / 저자 라디오파 집적회로를 위한 감압 화학기상증착 장비를 이용한 규소게르마늄 이종접합 쌍극자트랜지스터 = Reduced-pressure CVD-grown SiGe base HBTs for RF applications / 조덕호.
저자명 조덕호 ; Cho, Deok-Ho
발행사항 [대전 : 한국과학기술원, 1998].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8009312

소장위치/청구기호

학술문화관(문화관) 보존서고

DPH 98021

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

A SiGe HBT having an $f_{max}$ (maximum oscillation frequency) higher than $f_τ$ (cut off frequency) has been fabricated using a production chemical vapor deposition (CVD) reactor which allows $SiH_2Cl_2$-based Si collector epi-growth at high growth-rate as well as $SiH_4$-based SiGe base epi-growth at low growth-rate. Transistor design together with process integration was focused on lowering the extrinsic base resistance and the collector-base capacitance. To this purpose, a $TiSi_2$ layer with a sheet resistance of 1.3Ω/sq was used as a base electrode and a selectively implanted collector (SIC) was utilized. For base layer, an undoped-Si (300Å)/p-SiGe(200Å, $N_A = 4.4 \times 10^{18} cm^{-3}$, linearly-graded Ge composition from 0 to 0.19)/undoped-$Si_{0.81}Ge_{0.19}$ (110Å)/undoped-Si (300Å) multilayer was deposited on a LOCOS (LOCal Oxidation of Silicon)-patterned wafer. In order to form the emitter-base junction and to activate the As dopants in the polysilicon-emitter, rapid thermal anneal (RTA) at 900℃ for 20 sec was performed only one time so that outdiffusion of the boron in the base could be suppressed. The collector and base currents are shown nearly ideal. We obtained an $f_τ$ of 37GHz which is near the theoretical limit imposed by $BV_{CEO}$, and an $f_{max}$ of 42GHz. The base resistance and the collector-base capacitance extracted from measured S-parameters have a value of 37Ω and 27.2 fF, respectively. Using an RP (Reduced Pressure) CVD-grown SiGe-base HBT and a resonator consisting of a chip varactor and a microstrip line inductor, a COB (Chip-On-Board)-type 2.4GHz voltage-controlled oscillator (VCO) for wireless local loop (WLL) application has been demonstrated. The fabricated VCO chip size is 10 mm × 14 mm. At a supply voltage voltage of 5V, power dissipation was 28mW. Using an HP 8563 spectrum analyzer, a center frequency of 2.4GHz and a tuning band of 87MHz with variation of ±0.5dBm over the tuning band, and a phase noise of -110dBc/Hz (at 1MHz off the carrier) were obtained.

서지기타정보

서지기타정보
청구기호 {DPH 98021
형태사항 iv, 82 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Deok-Ho Cho
지도교수의 한글표기 : 신성철
공동교수의 한글표기 : 이주천
지도교수의 영문표기 : Sung-Chul Shin
공동교수의 영문표기 : Choo-Chon Lee
학위논문 학위논문(박사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 78-82
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