서지주요정보
화학증착법으로 제조한 다이아몬드막에서의 잔류응력에 관한 연구 = A study of residual stresses on CVD diamond films
서명 / 저자 화학증착법으로 제조한 다이아몬드막에서의 잔류응력에 관한 연구 = A study of residual stresses on CVD diamond films / 김정근.
저자명 김정근 ; Kim, Jung-Geun
발행사항 [대전 : 한국과학기술원, 1998].
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소장정보

등록번호

8009198

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 98020

휴대폰 전송

도서상태

이용가능

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반납예정일

리뷰정보

초록정보

Diamond films thinner than 30μm were grown on the P-type Si substrate using the hot filament chemical vapor deposition method under $CH_4/H_2$ gas mixture. Residual stress in the films were subsequently measured in air using the laser curvature, the X-ray diffraction (XRD) $sin^2$ ψ, and the Raman peak shift methods. A comparative analysis showed that the residual stress increased from compressive to tensile with the film thickness, but that the maximum or minimum extent of the stresses measured the Raman and XRD peak shift were 3∼4 times larger than those measured by the curvature method. In order to elucidate the disparity, the Raman and XRD peak shifts were calibrated by bending Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and Si substrate were measured directly using the sonic resonance method. After the adjustment, the disparities among the stress measurements were significantly reduced with stress ranging between -0.5 GPa to +0.8 GPa, which suggest a need the stress calibration in future studies. This is due to the fact that each measurement method has different characteristics and precise material properties of CVD diamond are not well known. Also, the peak shifting is effected by unknown factors as well as by the residual stress. So, if the residual stress were calculated with an entire amount of peak shifting, they would include some errors when using the Raman and XRD methods. On one side, the results of the curvature method do not reveal true residual stress because of the creep deformation of the Si substrate. Therefore, this method tends to overestimate residual stress, especially at high temperature and long time (a thick film) deposition processes. The results of each measuring system showed concordant behaviors of the residual stresses with the film thickness. In a thin film, the residual stress exhibited compressive residual stress, because of the thermal stress effect. When increased film thickness, however, the stresses changed to a tensile residual stress due to the intrinsic stress effect. Driving forces of the stress change are grain growth, decrease of the vacancy concentration. Tensile residual stresses were almost saturated, and those showed higher stress values with increased methane flow rate. Consequently, grain boundary, nondiamond, and vacancy acted as a potential source of tensile stress when film thickness increased. Considering the effects of thermal stress and creep deformation of Si substrate, an intrinsic stress were about +0.7 GPa with tensile stress.

서지기타정보

서지기타정보
청구기호 {DMS 98020
형태사항 viii, 106 p. : 삽도 ; 26 cm
언어 한국어
일반주기 부록 수록
저자명의 영문표기 : Jung-Geun Kim
지도교수의 한글표기 : 유진
지도교수의 영문표기 : Jin Yu
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 88-95
주제 화학증착법
다이아몬드
잔류응력
수소농도
라만분석
CVD
Diamond
Residual stress
Hydrogen concentration
Raman spectroscopy
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