In this thesis, the photoluminescence and the photoluminescence excitation of ZnSe are studied. The ZnSe sample were prepared by the melt growth technique. One sharp line, with energy about 2.682 eV, and three broad lines are observed. The peak energies of three broad lines are 2.327 eV, 1.957 eV and 1.529 eV, respectively. We investigate the change of peak energies and FWHM(full width half maximum) varing the temperature, the excitation laser intensity, and the wavelength of excitation laser. The mechanism of observed photoluminescence transition are interpreted by the configurational coordinate(CC) model, which explains the coupling of the electronic transition with the lattice vibration. The sharp line (2.682 eV) is observed with three phonon replicas and the donor's ionization energy is 30 meV. The green emission band (2.327 eV) is designated to be the transition from the shallow level near the conduction band to the empty $Cu^{2+}$ center. The red emission band (1.957 eV) is estimated to be from the shallow level near the conduction band to the empty $Cu^+$ center. The infrared emission band (1.529 eV) results from the recombination between two localized centers.
