We fabricate the light emitting cantilever using GaAs/AlGaAs micromachining. GaAs microstructure has been demonstrated for bulk and surface micromachining. But this microstructure has been passive device. So, By making the cantilever emit thr light, it can perform as both cantilever and light source. High doped GaAs cantilever is made for the current injection path to the active layer by using the eching profile of GaAs according to the lattice direction. It's power is about 0.1mW~0.2mW at 100mA current injection. This device is expected to be used as optical switch and sensor.