The long wavelength light source with dry etched surface grating is fabricated and measured. For this application, dry etching characteristics of InP RIE(Reactive Ion Etching) using CH4/H2 is studied. The etching parameter such that gas mix ratio, induced RF current, process pressure, electrode distance is determined. Also the re-growth for the BH(buried hetero structure) type applications is done using the chemical surface treatment after dry etching. The grating is fabricated using two beam optical interference method. The transmission characteristic is simulated according to the grating period, number and duty. The control method in grating period, number and duty is studied and experimented. The dry etched grating is fabricated using the combination of two methods.
