Nano-structure has been formed using Electron-beam lithography and Reactive Ion Etching. And the size of nano-structure has been reduced using thermal oxidation. And an side-wall nano-structure memory on SOI has been proposed and fabricated using E-beam lithography and RIE. Coulomb blockade effect was not obtained, because the dot size was too large. But successful memory operation has been obtained with the threshold voltage shift of ~2V at room temperature.
