서지주요정보
Cu 확산 방지용 TiN의 stuffing 효과에 관한 연구 = A study on the effect of TiN stuffing for Cu diffusion barrier
서명 / 저자 Cu 확산 방지용 TiN의 stuffing 효과에 관한 연구 = A study on the effect of TiN stuffing for Cu diffusion barrier / 황용섭.
저자명 황용섭 ; Hwang, Yong-Sup
발행사항 [대전 : 한국과학기술원, 1998].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8008739

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 98039

휴대폰 전송

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리뷰정보

초록정보

The effect of TiN stuffing(the densification of the grain boundary of TiN) for Cu diffusion barrier were studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage measurement. The samples with two structures of Cu(500nm)/TiN(40nm)/Ti(20nm)/Si and Cu/TiN/Ti/$SiO_2$(100nm)/Si were prepared. The TiN was stuffed with RTP treatment at various gas ambient($NH_3$, $N_2$, $H_2/Ar$) and temperatures for 1 minute. The samples were analyzed after annealing at from 500℃ to 800℃ in $10%H_2$/90%Ar ambient for 2 hours. By sheet resistance measurement, XRD, SEM and C-V measurement, it conformed that the TiN barrier of the lower RTP temperature fails at the lower annealing temperature. And by C-V measurement, it conformed that the TiN barrier of $NH_3$ ambient RTP treatment was superior to those of the different gas ambient RTP treatment.

서지기타정보

서지기타정보
청구기호 {MMS 98039
형태사항 67 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Yong-Sup Hwang
지도교수의 한글표기 : 박종욱
지도교수의 영문표기 : Chong-Ook Park
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 65-67
주제 충진 효과
확산 방지막
TiN
Stuffing
Diffusion barrier
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