서지주요정보
DC magnetron sputtering법을 이용한 Ir 하부전극의 형성 및 특성평가와 $(Ba,Sr)TiO_3$ 박막의 특성 평가 = Preparation and characterization of iridium bottom electrode by DC magnetron sputtering and characterization of $(Ba,Sr)TiO_3$ thin film
서명 / 저자 DC magnetron sputtering법을 이용한 Ir 하부전극의 형성 및 특성평가와 $(Ba,Sr)TiO_3$ 박막의 특성 평가 = Preparation and characterization of iridium bottom electrode by DC magnetron sputtering and characterization of $(Ba,Sr)TiO_3$ thin film / 박정호.
저자명 박정호 ; Park, Jeong-Ho
발행사항 [대전 : 한국과학기술원, 1998].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8008716

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 98016

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

High dielectric materials such as BST, etc. have been investigated widely for use as capacitor dielectrics in Gbit-scale DRAM (Dynamic Random Access Memory). These high dielectric materials require electrode materials because low dielectric layer is formed at interface between dielectric material and semiconductor. Noble metals such as Pt, Ru, etc. and conductive oxides such as $RuO_2$, etc. were widely used for electrode materials. But these electrodes materials have some drawbacks. Recently Ir has become a potential candidate for electrode material of ferroelectric capacitor including PZT, etc.. However Ir has rarely been reported as bottom electrode for BST thin film. Therefore we investigated the possibility of Ir as bottom electrode for BST thin film. Ir thin films were deposited on three different substrates, $SiO_2$, poly-Si & TiN/Ti/poly-Si, by DC magnetron sputtering. The Effects of deposition temperature, working pressure and power on properties of Ir thin film such as crystallinity, orientation, surface morphology, adhesion & resistivity were studied. as a results we obtain the optimum deposition condition, 400℃, 7.5mtorr and 0.09A, of Ir thin film. We investigated the effect of $O_2$ ambient annealing on surface morphology of Ir thin film. With the increase of annealing temperature surface roughness of Ir thin film abruptly increased. BST thin films were deposited at different temperatures by RF magnetron sputtering on optimized Ir bottom electrode using three substrates. Pt/BST/Ir capacitors were annealed at various temperatures in $O_2$ ambient. Pt/BST/Pt capacitor was prepared to investigate the effect of bottom electrode on electrical properties of BST capacitors. It was found that Pt/BST/Ir capacitor had electrical properties similar or superior to Pt/BST/Pt capacitor. All MIM capacitor was annealed at 650℃ in $O_2$ ambient for 30 min. and their electrical properties such as C-V, I-V were measured.

서지기타정보

서지기타정보
청구기호 {MMS 98016
형태사항 91 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jeong-Ho Park
지도교수의 한글표기 : 김호기
지도교수의 영문표기 : Ho-Gi Kim
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 88-91
주제 DC magnetron sputtering
Ir bottom electrode
BST
Different substrates
C-V
I-V
QR CODE qr code