서지주요정보
수소첨가에 의한 ZnO 박막의 전도성과 투과율 향상에 관한 연구 = A study on the enhancement of conductivity and transmittance of zinc oxide thin films by hydrogen addition
서명 / 저자 수소첨가에 의한 ZnO 박막의 전도성과 투과율 향상에 관한 연구 = A study on the enhancement of conductivity and transmittance of zinc oxide thin films by hydrogen addition / 강윤선.
발행사항 [대전 : 한국과학기술원, 1998].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8008703

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 98003

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

리뷰정보

초록정보

Hydrogen doped zinc oxide films were prepared on glass substrate by using rf reactive magnetron sputtering method and the films were annealed in vacuum furnace. The reactive sputtering was carried out at the atmosphere of argon, oxygen and hydrogen. The gas composition of hydrogen was changed from 0% to 24%. In order to ionize the doped hydrogen atoms, the as-deposited films were annealed at 500℃, for 1 hour. Highly conductive and transparent hydrogen doped ZnO thin films were prepared on glass substrates by using rf reactive magnetron sputtering from zinc target. The reactive sputtering gas was composed of argon, oxygen and 0~24% hydrogen. The effects of a hydrogen on the structural, electrical and optical properties of ZnO thin films were investigated in detail. There was a close relationship between electro-optical properties and structural properties. Using X-ray diffraction analysis, we could find that the c-axis was highly oriented perpendicular to the substrate in the range of 0~8% hydrogen, but the (0002) preferred orientation was degraded and the direction of grain growth was changed from (0002) to (1010)(1011)(1120) etc. as hydrogen content increased above 8%. And cross-sectional SEM images showed that colummar structure was well developed in ZnO thin films to some limit of hydrogen content (8% hydrogen) but, higher than the limit, secondary nucleation occurred and grain boundary density sharply increased. These increase of grain boundary density caused the electro-optical properties of ZnO thin films to degrade because grain boundaries act as trap sites lowering the mobility of free carriers. In addition, we heat treated the as- deposited hydrogen doped zinc oxide films for ionization of hydrogen atoms and recrystallization of the films. After heat treatment, c-axis orientation of ZnO films, Which are evaluated by full width at half maximun {FWHM} of XRD peak, was enhanced and grain boundary density decreased. As a result, the resistivity was lowered to the value of $10^{-3}Ωcm$ and the transmittance was improved to about 88% in visible wavelength region on optimum condition (8% hydrogen addition, 500℃, 1hr heat treatment in vacuum furnace), which was the highest value yet reported for ZnO films doped with hydrogen.

서지기타정보

서지기타정보
청구기호 {MMS 98003
형태사항 iv, 74 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Youn-Seon Kang
지도교수의 한글표기 : 이재영
지도교수의 영문표기 : Jai-Young Lee
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 73-74
주제 수소
산화아연
스퍼터링
전기전도도
광투과율
Hydrogen
Zinc oxide
Sputtering
Electrical conductivity
Optical transmittance
QR CODE qr code