서지주요정보
Deep UV and electron beam resists based on maleimide polymers = 말레이미드 고분자를 기본으로 한 원자외선 및 전자선 레지스트 연구
서명 / 저자 Deep UV and electron beam resists based on maleimide polymers = 말레이미드 고분자를 기본으로 한 원자외선 및 전자선 레지스트 연구 / Sang-Tae Kim.
발행사항 [대전 : 한국과학기술원, 1997].
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8008234

소장위치/청구기호

학술문화관(문화관) 보존서고

DAME 97007

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A variety of N-substituted maleimide monomers have been synthesized and copolymerized with styrene derivatives(XSt) and/or 1-vinyl-2-pyrrolidinone (VP). The resulting copolymers were subjected to deep UV(DUV) irradiation to evaluate them as potential photoresists. The facile deprotection of the silyl protecting groups in the silicon-containing copolymer P(SiOMI/XSt) by DUV irradiation in the presence of a photoacid generator brought a signifiant change in solubility properties. Accordingly, a clean positive image pattern with 0.7-㎛ line and space was obtained. Since the silicon containing copolymer P(SiOMI/XSt) requires a photoacid generator, next phase of our efforts has focused on the development of a single-component resist system. Thus, a maleimide monomer CSOMI having 10- camphorsulfonyl group was prepared and copolymerized with styrene derivatives to provide copolymers P(CSOMI/XSt). The releasing of a strong camphorsulfonic acid(CSA) upon DUV irradiation from copolymers P(CSOMI/XSt) was confirmed by spectroscopic analysis of the resulting polymer and of the released camphorsulfonic acid. Accordingly, the copolymers P(CSOMI/XSt) were found to possess the capability of a single-component resist system based on the chemical amplification concept in the absence of an externally added PAG. This type of resist system should be free of the compatibility problem arising from addition of a crystalline PAG due to its low solubility in the resist media. For the improvement of the resist properties from the copolymers P(CSOMI/XSt), we then moved into a terpolymer system, in which 1-vinyl-2-pyrrolidinone (VP) was employed as a new monomer. The weakly basic VP units are particularly incorporated into the polymer backbone for enhancing solubility, adhesion and furthermore improving post-exposure delay (PED) stability. The terpolymer P(CSOMI/t-BOCMI/VP) have a good film-forming property with a very low optical density of $0.08μm^{-1}$ at 250 nm. Indeed, a clean positive resist image of 0.3-㎛ line and space patterns was obtained by irradiation with 30 KeV electron beam, PEB, and development in a 2.38% aqueous TMAH solution.

서지기타정보

서지기타정보
청구기호 {DAME 97007
형태사항 xiii, 103 p. : 삽화 ; 26 cm
언어 영어
일반주기 저자명의 한글표기 : 김상태
지도교수의 영문표기 : Jin-Baek Kim
지도교수의 한글표기 : 김진백
수록 잡지명 : "Polymerization of N-(tert-butyldimethylsilyloxy)maleimide and applications of the Polymers as Resist Materials". J. Appl. Polym. Sci. (accepted). WILEY published by John Wiley & Sons, Inc.
학위논문 학위논문(박사) - 한국과학기술원 : 신소재공학과,
서지주기 Reference : p. 97-103
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