In general, the IR FPA can be subdivided into the detector array, and the readout electronics. These components are often realized in different materials and mated together using the hybrid IR FPA technology. The readout electronics consist of unit cell electronics that provide the detector bias, photo-current integration and pixel selection, and peripheral electronics for addressing the unit cell electronics, external interfacing and additional output buffering.
In this thesis, the new readout circuit for HgCdTe IR detector was designed and fabricated to integrate the photoelectrons collected by the detector and to permit multiplexing of individual detector outputs. The readout circuit provide a stable diode bias and immunity to noise. It also can nearly eliminate the clock-feed-through and solve the problem of capacitance non-uniformity in integration capacitors. Using the hybridized chip of 1‘128 $Hg_{0.7}Cd_{0.3}Te$ IR detector and the readout circuit, thermal image was obtained.
