서지주요정보
Synthesis and lithographic characterization of poly(N-p-(tert-butoxycarvbonyloxy)phenyl dimethacrylamide) = 폴리(N-파라-(터셔리-부톡시카르보닐옥시)페닐 디메타크릴아미드)의 합성 과및 리소그라피 특성
서명 / 저자 Synthesis and lithographic characterization of poly(N-p-(tert-butoxycarvbonyloxy)phenyl dimethacrylamide) = 폴리(N-파라-(터셔리-부톡시카르보닐옥시)페닐 디메타크릴아미드)의 합성 과및 리소그라피 특성 / Kyong-Il Kwon.
저자명 Kwon, Kyong-Il ; 권경일
발행사항 [대전 : 한국과학기술원, 1997].
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소장정보

등록번호

8007091

소장위치/청구기호

학술문화관(문화관) 보존서고

MAME 97001

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리뷰정보

초록정보

In the present work, synthesis and lithographic characteristics of the poly(N-p-(tert-butoxycarbonyloxy)phenyl dimethacrylamide), poly(TBPDMA), which has a cyclic structure in the main chain has been studied. Monomer, N-p-(tert-butoxylcarbonyloxy)phenyl dimethacrylamide was cyclopolymerized in solution when heated with free radical initiator, AIBN (2,2'-azobisisobutyronitrile), yield soluble and fusible polymer that contain practically no unsaturation. The structure of polymer was confirmed by $^1H-NMR$, $^{13}C-NMR$, and FT-IR. The chemical changes of resist system due to deep UV irradiation were performed by using TGA, FT-IR, and UV spectrometer. We obtained 2 $\mum$ line positive image patterns. We knew that the new resist material has desirable properties such as high transparency in deep UV region, facile deprotection, proper sensitivity. Especially this resist material is worthy of notice. This system can be applied to 'Self-development photoresist' which has not need to develope.

서지기타정보

서지기타정보
청구기호 {MAME 97001
형태사항 viii, 84 p. : 삽도 ; 26 cm
언어 영어
일반주기 저자명의 한글표기 : 권경일
지도교수의 영문표기 : Jin-Baek Kim
지도교수의 한글표기 : 김진백
학위논문 학위논문(석사) - 한국과학기술원 : 신소재공학과,
서지주기 Reference : p. 79-84
주제 Photolithography
Chemically amplified resist
Self-development photoresist
Poly[N-p-(tert-butoxycarbonyloxy)phenyl dimethacrylamide]
Cyclopolymerization
광미세가공
화학증폭형 레지스트
폴리[N-파라-(터셔리-부톡시카르보닐옥시)페닐 디메타크릴아미드]
자발현상성 포토레지스트
고리화중합
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