In the present work, synthesis and lithographic characteristics of the poly(N-p-(tert-butoxycarbonyloxy)phenyl dimethacrylamide), poly(TBPDMA), which has a cyclic structure in the main chain has been studied.
Monomer, N-p-(tert-butoxylcarbonyloxy)phenyl dimethacrylamide was cyclopolymerized in solution when heated with free radical initiator, AIBN (2,2'-azobisisobutyronitrile), yield soluble and fusible polymer that contain practically no unsaturation. The structure of polymer was confirmed by $^1H-NMR$, $^{13}C-NMR$, and FT-IR.
The chemical changes of resist system due to deep UV irradiation were performed by using TGA, FT-IR, and UV spectrometer. We obtained 2 $＼mum$ line positive image patterns. We knew that the new resist material has desirable properties such as high transparency in deep UV region, facile deprotection, proper sensitivity.
Especially this resist material is worthy of notice. This system can be applied to 'Self-development photoresist' which has not need to develope.
