서지주요정보
1-T형 비휘발성 메모리의 강유전체와 반도체와의 상호 연계에 대한 연구 = A study on the interplays between ferroelectric and semiconductor materials in 1-T type nonvolatile memory device
서명 / 저자 1-T형 비휘발성 메모리의 강유전체와 반도체와의 상호 연계에 대한 연구 = A study on the interplays between ferroelectric and semiconductor materials in 1-T type nonvolatile memory device / 신상훈.
저자명 신상훈 ; Shin, Sang-Hoon
발행사항 [대전 : 한국과학기술원, 1997].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8007485

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 97045

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Among the single-transistor type memory devices which contain ferroelectric thin films, the MFMIS(Metal Ferroelectric Metal Insulator Semiconductor)-structured device is expected to be free from the problem of the structural instability at the interface between the ferroelectric and the semiconductor material present in the MFS(Metal Ferroelectric Semiconductor)-structured device. In this thesis we have attempted to find the interplays between the ferroelectric and the semiconductor materials of the MFMIS -structured device. In detail, the MFMIS FET, which uses the ferroelectric material as a part of the gate structure, show a memory window in the curve measurement. Thus we have investigated the memory window by a computer-aided simulation technique and tried to express it as a form of an analytic function. To calculate the polarization of the ferroelectric material we use three-different phenomenological models. These three different models lead to the same equivalent circuit when the non-linear hysteresis behavior of the polarization and the linear one are considered together. Meanwhile, in the semiconductor the surface space charge is calculated based on the sheet charge model. When the gate bias sweeps, the semiconductor capacitance is found to show a big change and affects the memory window present in the C-V curve of the MFMIS-structured device. Also it is learned that the magnitude of the memory window is approximately the twice of the true coercive voltage which is intrinsic value of the ferroelectric materials. In addition, by comparison of the curve of P-V$_F$ with that of C-Vg, it is found that the depletion region of the semiconductor occupies only a small region of the ferroelectric hysteresis loop near the coercive voltage.

서지기타정보

서지기타정보
청구기호 {MMS 97045
형태사항 vi, 65, xxix p. : 삽도 ; 26 cm
언어 한국어
일반주기 부록 수록
저자명의 영문표기 : Sang-Hoon Shin
지도교수의 한글표기 : 전덕영
지도교수의 영문표기 : Duk-Young Jeon
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 63-65
주제 메모리 소자
강유전체
분극
메모리 윈도우
항전압
이력 곡선
Memory device
Ferroelectric
Polarization
Memory window
Coercive voltage
Hysteresis loop
QR CODE qr code