The barrier property of ECR-PECVD TiN film against Cu diffusion were studied using scanning electron microscopy, Auger electron spectroscopy and I-V measurement. TiN films(30nm) were prepared by ECR PECVD using $TiCl_4$, $N_2$ and $H_2$ chemistry at 450℃. Cu films(300nm) were deposited by RF magnetron sputtering. The Cu/TiN/Si structure was annealed at 400~600℃ for 30min in an Ar-$H_2$(10%) ambient.
The TiN films deposited with substrate bias contained defects within grains and were more stressed than those deposited without substrate bias. With the application of substrate bias, TiN films had high N/Ti ratio in composition and showed improved barrier property against Cu diffusion.
Oxygen stuffed TiN films have high oxygen contents at the surface and showed improved barrier property against Cu diffusion.
Plasma nitrided TiN films have high N/Ti ratio at the surface and showed improved barrier property against Cu diffusion.
