서지주요정보
ECR-PECVD 법으로 증착한 TiN 박막의 Cu에 대한 확산방지막 특성 = The barrier property of ECR-PECVD TiN film against Cu diffusion
서명 / 저자 ECR-PECVD 법으로 증착한 TiN 박막의 Cu에 대한 확산방지막 특성 = The barrier property of ECR-PECVD TiN film against Cu diffusion / 이수정.
발행사항 [대전 : 한국과학기술원, 1997].
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소장정보

등록번호

8007463

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 97023

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리뷰정보

초록정보

The barrier property of ECR-PECVD TiN film against Cu diffusion were studied using scanning electron microscopy, Auger electron spectroscopy and I-V measurement. TiN films(30nm) were prepared by ECR PECVD using $TiCl_4$, $N_2$ and $H_2$ chemistry at 450℃. Cu films(300nm) were deposited by RF magnetron sputtering. The Cu/TiN/Si structure was annealed at 400~600℃ for 30min in an Ar-$H_2$(10%) ambient. The TiN films deposited with substrate bias contained defects within grains and were more stressed than those deposited without substrate bias. With the application of substrate bias, TiN films had high N/Ti ratio in composition and showed improved barrier property against Cu diffusion. Oxygen stuffed TiN films have high oxygen contents at the surface and showed improved barrier property against Cu diffusion. Plasma nitrided TiN films have high N/Ti ratio at the surface and showed improved barrier property against Cu diffusion.

서지기타정보

서지기타정보
청구기호 {MMS 97023
형태사항 [ii], 60 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Soo-Jeong Lee
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Won-Jeong Lee
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 58-60
주제 ECR-플라즈마 화학기상증착법
TiN
확산방지막
ECR-PECVD
TiN
Diffusion barrier
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