서지주요정보
$O_2/Cl_2$ ECR 플라즈마를 이용한 $RuO_2$ 박막의 건식 식각특성에 관한 연구 = Dry etching chacrateristics of $RuO_2$ thin film in $O_2/Cl_2$ electron cycl0tron resonance plasma
서명 / 저자 $O_2/Cl_2$ ECR 플라즈마를 이용한 $RuO_2$ 박막의 건식 식각특성에 관한 연구 = Dry etching chacrateristics of $RuO_2$ thin film in $O_2/Cl_2$ electron cycl0tron resonance plasma / 김종삼.
저자명 김종삼 ; Kim, Jong-Sam
발행사항 [대전 : 한국과학기술원, 1997].
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소장정보

등록번호

8007448

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 97008

SMS전송

도서상태

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반납예정일

초록정보

In this study, we investigated the etching mechanism of $RuO_2$ thin film in $Cl_2$ and $O_2/Cl_2$ electron cyclotron resonance plasma. This work can give good information of acquiring optimal condition in the process of G-bit DRAM devices. To study accurately, we investigated the etch rate of $RuO_2$ film with processing parameters, incident ion flux and bombarding energy, and O* and Cl* radical concentration. In $O_2/Cl_2$ plasma, it was $O_2:Cl_2=5:5$ (flow rate ratio) that show maximum etch rate which was 7 times higher than pure $O_2$ or $Cl_2$ plasma. The etch rate was greatly dependent on O* radical concentration and incident ion bombarding energy. Even though there were enough O* radicals, $RuO_2$ was not etched without ion bombardment. So we found that the etching mechanism of $RuO_2$ film in $O_2/Cl_2$ plasma was ion induced etching. In $Cl_2$ plasma, the characteristic of $RuO_2$ film was found to be ion sputter etching and the etch rate was greatly dependent on the incident ion flux and bombarding energy.

서지기타정보

서지기타정보
청구기호 {MMS 97008
형태사항 [ii], 79 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jong-Sam Kim
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Won-Jong Lee
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 76-79
주제 염소플라즈마
플라즈마식각
$RuO_2$
Plasma etching
ECR
$Cl_2$ plasma
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