서지주요정보
ECR plasma enhanced DC magnetron multi-target sputtering 방법을 이용한 $Pb(Zr,Ti)O_3$ 박막의 제조 및 특성 평가 연구 = Preparation and characterization of $Pb(Zr,Ti)O_3$ thin films by ECR plasma enhanced DC magnetron multi-target sputtering
서명 / 저자 ECR plasma enhanced DC magnetron multi-target sputtering 방법을 이용한 $Pb(Zr,Ti)O_3$ 박막의 제조 및 특성 평가 연구 = Preparation and characterization of $Pb(Zr,Ti)O_3$ thin films by ECR plasma enhanced DC magnetron multi-target sputtering / 김성태.
저자명 김성태 ; Kim, Sung-Tae
발행사항 [대전 : 한국과학기술원, 1997].
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소장정보

등록번호

8007405

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 97013

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

리뷰정보

초록정보

Lead Zirconate titanate (PZT) is a ferroelectric material which has perovskite structure. The PZT film is one of the promising materials applicable to capacitors in memory devices, such as dynamic random access memory (DRAM) and ferroelectric non-volatile memory (FRAM), because of its high dielectric constant, high breakdown strength, and hysteresis properties. In this study, perovskite PZT films were fabricated on platinized Si substrates by ECR plasma enhanced DC magnetron multi-target reactive sputtering method. The multi-target sputtering method leads to better control of the process in the case of multi-component films. The effect of activation of oxygen by ECR plasma on the composition and structure of the film was examined. The effect of each element on the formation of nucleation sites for the perovskite phase was also investigated. On the basis of these results, the early stage process condition which leads to the formation of the perovskite phase films with good crystallinity and electrical properties is suggested. The effect of deposition condition of the Pt electrode on the properties of the PZT capacitors within the MFM structure was studied. Microstructual changes of the Pt electrode deposited at various conditions were investigated. The crystalline structure and electrical properties of the PZT films deposited on Pt/Ti/SiO2/Si substrate were also examined as a function of deposition condition of the Pt film. Activation of oxygen by ECR plasma enhanced the incorporation of Pb into the PZT film so that stable stoichiometric composition was obtained at very high Zr/Ti concentration ratios and high deposition temperatures above 500℃. This is because the oxygen molecules activated by ECR plasma are so reactive that not only titania but also zirconia reacts readily with the lead oxide molecules, leading to the enhanced Pb incorporation into the PZT film. Stable incorporation of Pb at the early stage of film formation is very important to the formation of nucleation sites for the perovskite-phase PZT films, because Pb incorporation into A site of the perovskite structure helps the incorporation of Zr and Ti atoms into B sites, resulting in a stable stoichiometric PZT film. Pb incorporation at the early stage was enhanced more effectively by lowering the Zr/Ti flux ratio than by simply supplying Pb excessively. The structure and electrical properties of PZT films deposited on Pt/Ti/SiO2/Si electrode were sensitively changed by the deposition condition of the Pt film. As the deposition temperature of the Pt film increased or the deposition rate decreased, the Pt film became dense and the out-diffusion of Ti and the deformation of the Pt film were suppressed. During the high temperature process, Ti diffused out through the grain boundaries of the Pt overlayer. The out-diffused Ti helped the formation of nucleation sites for the perovskite PZT films. However, excessive Ti out-diffusion not only decreased the total capacitance of the PZT capacitor by forming an interfacial layer of low dielectric constant, but also degraded the leakage current characteristics of the PZT film by deforming the Pt electrode.

서지기타정보

서지기타정보
청구기호 {DMS 97013
형태사항 v, 136 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sung-Tae Kim
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Won-Jong Lee
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 131-136
주제 PZT 박막
ECR 프라즈마
활성화
Pt 기판
Lead zirconate titanate
Sputtering
ECR plasma
Activation
Platinum substrate
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