서지주요정보
ECR PE-MOCVD법에 의해 증착된 $PbTiO_3$, PLT 박막의 특성에 관한 연구 = A study on the characteristics of $PbTiO_3$, PLT thin films deposited by ECR PE-MOCVD
서명 / 저자 ECR PE-MOCVD법에 의해 증착된 $PbTiO_3$, PLT 박막의 특성에 관한 연구 = A study on the characteristics of $PbTiO_3$, PLT thin films deposited by ECR PE-MOCVD / 정성웅.
발행사항 [대전 : 한국과학기술원, 1996].
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소장정보

등록번호

8006949

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 96022

휴대폰 전송

도서상태

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반납예정일

리뷰정보

초록정보

Many attempts have been made to apply ferroelectric thin films to a variety of devices as dielectric thin films for DRAMs, ferroelectric RAMs, infrared sensors and optical waveguides. Dielectric thin films with low leakage current and high dielectric permitivity are necessary for capacitors in ULSI DRAMs. In this study, Electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method is used to prepare ferroelectric $PbTiO_3$ and $(Pb,La)TiO_3$ films. Single-phase perovskite $PbTiO_3$ and PLT films with smooth surface were successfully fabricated on $Pt/Ti/SiO_2/Si$ substrates at low temperatures of 400~500℃ using metal-organic(MO) sources. Used MO sources are $Pb(DPM)_2$, Ti-iso-propoxide and $La(DPM)_3$. The effects of the deposition parameters, such as deposition temperature, $O_2$ flow rate, microwave power and MO source flow rates, on the crystalline structure, composition, surface morphology and electrical properties, like polarization-electric field (P-E), capacitance-voltage (C-V), capacitance-frequency (C-f), leakage current-voltage (I-V) and current-time (I-t), were investigated. The films had the composition and structure of the stoichiometric perovskite $PbTiO_3$ and PLT even if the MO source input ratios were not perfectly controlled at the process temperature above 450℃ if the oxygen supply is sufficient. When $Pb(DPM)_2$ was introduced into the ($Ar+O_2$) plasma prior to the PLT deposition, the crystallinity and the composition uniformity of the films were improved. La content in the PLT films could be easily controlled by varying the $La(DPM)_3$ and TiIP flow rates at a fixed temperature. Excellent electrical properties were obtained from the as-deposited PLT films containing of La. The $SiO_2$ equivalent thickness of the 1250Å thick PLT (La11%) film decreased from 7.8Å to 6.9Å after the post RTA process at 700℃ for 1 min. The leakage current density of PLT(La11%) film was less than $10^{-7}A/㎠ at 3V. The leakage current mechanism in high voltage region was proved to be Schottky conduction and the zero-bias barrier height of PLT(La11%) film was 0.76eV. The Shottky barrier height can be lowered by the positive charges at the interface between the films and the electrodes. C-V measurement of the films showed that the positive fixed charges and/or the surface state density was higher at the upper electrode. Consequently, the films were more leaky with negatiely biased upper electrode. The distribution of the fixed charges became more symmetric after RTA treatment and higher dielectric constant was obtained. From the above results, I would conclude that the PLT film is one of the very attractive dielectric thin films for ULSI DRAM capacitors.

서지기타정보

서지기타정보
청구기호 {DMS 96022
형태사항 iv, 190 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sung-Woong Chung
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Won-Jong Lee
수록잡지명 : "Characterozation of PbTiO3 thin films deposited on Pt/Ti/$SiO_2$/Si substrates by ECR PECVD". Journal of Materials Research, vol. 10, no. 2, pp. 447-452 (1995)
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 180-184
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