서지주요정보
0.25mm 광리소그래피 결상에 존재하는 근접효과와 그 감소 방안에 관한 연구 = A study of the proximity effect present in the image forming process of the 0.25 micrometer photolithography and its reduction
서명 / 저자 0.25mm 광리소그래피 결상에 존재하는 근접효과와 그 감소 방안에 관한 연구 = A study of the proximity effect present in the image forming process of the 0.25 micrometer photolithography and its reduction / 정진만.
저자명 정진만 ; Jeong, Jin-Man
발행사항 [대전 : 한국과학기술원, 1996].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8007005

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 96050

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

The optical proximity effects are becoming a significant consideration to the linewidth control in sub-micron optical litho-graphy, as the lithographic tools are being operated closer to the resolution limits. Proximity effect was first used to discribe pattern distortion caused by electron scattering in E-beam lithography. The term was described as a similar phenomenon of pattern distortion in optical lithography. Optical proximity effects seen on wafers arise from non-linear interactions between nearby regions of the aerial image. There are various forms of proximity effects, line width error, line end shortening, cornor rounding, etc, and the optical proximity behavior depends on the exposure wavelength, the partial coherence, and the numerical aperture of the printer. With parameter, the term is calculated from the image of mask with various patterns. The aerial image was calculated using Hopkins transmission cross coefficient, TCC, formulation and rapid integral evaluation technique using Simpson method without aberration and 16-point Gausian quadruture method with defocus. Various type of mask, conventional mask, alternating type PSM, attenuated type PSM and tri-phase type PSM, which the term was calculated with was used. Each mask have 0.18㎛ or 0.25㎛ minimum feature size which will be used in 1GB DRAM or 256MB DRAM. Of these mask, tri-phase type PSM which have two 120˚ phase-shifters desigend in a study. Sum of overlaped wave-vectors which are diffracted from each shifter is zero. So this mask has good contrast. From the obtained data, in the conventional masks with 0.25㎛ pattern the maximum of proximity effect and its variation are smallest at σ= 0.6, and its variation rate in NA= 0.4~0.5 is 30% at σ= 0.4, 80% at σ= 0.6 and 10% at σ= 0.8. In the pattern of group 3 or 4, the variation rate of proximity effect in a tri-phase PSM which in NA = 0.4~0.5 is 8% ±1 is smaller then in conventional mask or attenuated type.

서지기타정보

서지기타정보
청구기호 {MMS 96050
형태사항 vi, 64 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jin-Man Jeong
지도교수의 한글표기 : 전덕영
지도교수의 영문표기 : Duk-Young Jeon
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 63-64
주제 근접효과
홉킨스 이론
부분간섭성
미세리소그래피
삼위상형 위상반전매스크
Proximity effect
Hopkins theory
Partial coherence
Microlithography
Tri-phase type PSM
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