서지주요정보
ECR $N_2O$-플라즈마 산화 및 응용 = Ecr $N_2O$-plasma oxidation and its applications
서명 / 저자 ECR $N_2O$-플라즈마 산화 및 응용 = Ecr $N_2O$-plasma oxidation and its applications / 이진우.
저자명 이진우 ; Lee, Jin-Woo
발행사항 [대전 : 한국과학기술원, 1996].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8006283

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 96068

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

ECR $N_2O$-plasma oxidation method has been investigated to grow thin gate dielectric on polycrystalline silicon. The growth and physico-chemical characteristics of ECR $N_2O$-plasma oxide are studied on crystalline silicon as well as polycrystalline silicon. ECR $N_2O$-plasma oxidation shows good thickness controllability with its low oxidation rate on crystalline silicon. In spite of low process temperature, ECR $N_2O$-plasma oxidation successfully incorporates nitrogen atoms at the Si/$SiO_2$ interface, consequently, forms a nitrogen-rich layer. X-ray Photoelecton Spectroscopy(XPS) study shows that ECR $N_2O$-plasma oxidation generates Si≡ N bonds for oxide grown on crystalline silicon, while generates $Si_2$=N-O bonds as well as Si-N-$H_2$ bonds for oxide grown on polycrystalline silicon. ECR $N_2O$plasma oxidation can improve the characteristics of thermal oxide. The ECR $N_2O$-plasma nitrided thermal oxide shows higher breakdown field, lower charge trapping, higher time-to-breakdown and higher charge-to-breakdown values in comparison with those of without ECR $N_2O$-plasma nitridation. Nitrogen-rich layer is responsible for the improved characteristics of nitrided thermal oxide, which replace stained Si-O bonds to Si-N bonds. ECR $N_2O$-plasma oxidation does not degrade micro-roughness of polycrystalline silicon, which leads higher breakdown fields of ECR $N_2O$-plasma oxide on polycrystalline silicon. In addition, during ECR $N_2O$-plasma oxidation, defects in oxide and dangling bonds at the grain boundary are passivated by oxygen and nitrogen plasma. ECR $N_2O$-plasma oxidation process is used as a thin gate oxide growing process for the improvement of both uniformity and reliability in polycrystalline silicon thin-film transistor. ECR $N_2O$-plasma oxide grown on polysilicon films exhibits good electrical characteristics and a smooth and uniform interface by a nitrogen-rich layer at the interface. Poly-Si TFTs with ECR $N_2O$-plasma oxide and no hydrogenation also shows better performance than with thermal oxide and with ECR $O_2$-plasma oxide, which is attributed to the smooth interface and oxygen plasma and nitrogen plasma passivation. ECR $N_2O$-plasma oxidation process is directly applicable to poly-Si TFT, EEPROM on polycrystalline silicon substrate, and various applications where the thin oxide on polycrystalline silicon is needed.

서지기타정보

서지기타정보
청구기호 {MEE 96068
형태사항 iv, 85 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jin-Woo Lee
지도교수의 한글표기 : 이희철
지도교수의 영문표기 : Hee-Chul Lee
학위논문 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과,
서지주기 참고문헌 : p. 82-85
주제 ECR N2O-플라즈마
질화 산화막
얇은 게이트 산화막
다결정 실리콘
다결정 산화막
ECR N2O-Plasma
Oxynitride
Thin gate oxide
Polysilicon TFT
Polyoxide
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