The metal-semiconductor-metal photodiode (MSM-PD) and amplifier (PDIC's) are integrated on the GaAs wafer grown by metal-organic chemical vapor deposition (MOCVD) for optical receiver system, especially front-end block in receriver. The topology of amplifier interated with MSM-PD is source-coupled type because reference voltage is need to compare with input signal. Responsivity of fabricated MSM-PD is about 0.15A/W and the gain of amplifier represented as the ratio of output voltage to input photocurrent is about 24 ~80k Ω. The frequency response of this PDIC's will be more than 50MHz. And also new apparatus for uniform etching was developed because drain current critically depends on the gate recess process, which is normally performed by hand-agitation of users in MMIC's process. The controllability for etching depth of this apparatus is about 100Å and when FET was made by this apparatus, the standard deviation of $I_{DSS}$ is about 2mA for 31mA $I_{DSS}$.
