서지주요정보
반응성 스퍼터링법에 의해 제조된 PZT박막에 Ta첨가의 영향에 관한 연구 = A study on effects of Ta addition in PZT thin films by reactive sputtering
서명 / 저자 반응성 스퍼터링법에 의해 제조된 PZT박막에 Ta첨가의 영향에 관한 연구 = A study on effects of Ta addition in PZT thin films by reactive sputtering / 최광표.
발행사항 [대전 : 한국과학기술원, 1996].
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소장정보

등록번호

8006538

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 96046

휴대폰 전송

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리뷰정보

초록정보

Lead zirconate titanate(Pb(Zr,Ti)$O_3$(PZT)) thin films have been prepared on Pt/$SiO_2$/Si by DC reactive sputtering using multi-target. In the present study, Ta addition effects and $PbTiO_3$ buffer layer effects on the phase formation and electrical properties of PZT thin films have been studied. Randomly oriented polycrystalline PZT thin films were obtained at 550℃. By using $PbTiO_3$(PT) buffer layer, randomly oriented PZT thin films changed to highly (100) oriented films at 550℃ and the crystallinity of PZT thin films abruptly increased. Structural change occurred in PZT thin films with Ta addition. With increasing Ta content, the tetragonal c/a ratio of PZT thin films decreased in terms of crystal structure and grain size increased and denser surface morphology was obtained in terms of microstructure. Dielectric constant increased with Ta addition and hysteresis loop was slimmer. This is due to decrease of paraelectric-ferroelectric transition temperature, increase of grain size, and decrease of tetragonality. From C-V and P-E hysteresis results, asymmetric Ec due to internal bias field was found in tetragonal PZT thin films without Ta addition and with increasing Ta content, internal bias field decreased. This result is due to decrease of oxygen vacancy. Internal bias field results from defect dipolar complexes and asymmetric distribution of oxygen vacancies. Retention test results suggest that defect dipolar complexes seem to be more responsible for internal bias field. The decrease of leakage current density due to charge compensation was found in PZT thin films with Ta addition. With increasing Ta content, both initial remanant polarization and fatigue rate decreased. These changes can result from decrease of oxygen vacancy, changes of microstructure, and decrease of tetragonality.

서지기타정보

서지기타정보
청구기호 {MMS 96046
형태사항 vi, 76 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Gwang-Pyo Choi
지도교수의 한글표기 : 김호기
지도교수의 영문표기 : Ho-Gi Kim
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 74-76
주제 PZT
반응성 스퍼터링
Ta
첨가물
PZT
Reactive Sputtering
Ta
Dopant
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