서지주요정보
TiN의 Cu 확산방지막 특성 및 그 특성 평가 방법에 관한 연구 = The properties and the characterization methods of TiN as a barrier against Cu diffusion
서명 / 저자 TiN의 Cu 확산방지막 특성 및 그 특성 평가 방법에 관한 연구 = The properties and the characterization methods of TiN as a barrier against Cu diffusion / 이승윤.
저자명 이승윤 ; Lee, Seung-Yun
발행사항 [대전 : 한국과학기술원, 1996].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8006525

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 96033

휴대폰 전송

도서상태

이용가능

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반납예정일

초록정보

The properties of TiN as a barrier against Cu diffusion were studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage measurement, and the sensitivity of Cu diffusion detection was compared between the characterization methods. The samples with the structure of Cu(5000Å)/TiN/Ti(300Å)/ $SiO_2$(1000Å)/Si were prepared by various deposition techniques. The sample were analyzed after annealing at from 500℃ to 800℃ in 10%$H_2$/90%Ar ambient for 2 hours. For C-V measurement, the MOS capacitors with the structure of Al/$SiO_2$/Si were made by wet etching and Al evaporation. By sheet resistance measurement, SEM and C-V measurement, it was conformed that the thinner TiN barrier fails at the lower temperature. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. The variations of C-V characteristics may be due to Cu which have diffused into $SiO_2$ and Si.

서지기타정보

서지기타정보
청구기호 {MMS 96033
형태사항 iii, 65 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Seung-Yun Lee
지도교수의 한글표기 : 박종욱
지도교수의 영문표기 : Chong-Ook Park
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 63-65
주제 금속공정
배선재료
확산방지막
TiN
Cu
Diffusion Barrier
CV Measurment
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