The properties of TiN as a barrier against Cu diffusion were studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage measurement, and the sensitivity of Cu diffusion detection was compared between the characterization methods. The samples with the structure of Cu(5000Å)/TiN/Ti(300Å)/ $SiO_2$(1000Å)/Si were prepared by various deposition techniques. The sample were analyzed after annealing at from 500℃ to 800℃ in 10%$H_2$/90%Ar ambient for 2 hours. For C-V measurement, the MOS capacitors with the structure of Al/$SiO_2$/Si were made by wet etching and Al evaporation. By sheet resistance measurement, SEM and C-V measurement, it was conformed that the thinner TiN barrier fails at the lower temperature. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. The variations of C-V characteristics may be due to Cu which have diffused into $SiO_2$ and Si.
